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Tunning pore filling of anodic alumina templates by accurate control of the bottom barrier layer thickness

机译:通过精确控制底部阻挡层的厚度来填充阳极氧化铝模板的孔

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摘要

The role of the alumina barrier layer thickness (δ_b) on the growth of Ni nanowires (NWs) in porous anodic alumina (PAA) has been revealed. By varying the final anodization voltage to form dendrites at the bottom of the nanoporous structure, we are able to optimize δ_b (in the 2-16nm range), allowing us to obtain a Ni pore filling percentage (f_p) of almost 100% for δ_b = 10nm. However, deviations from this optimal δ_b-value led to a strong decrease of f_p. Moreover, an increase of the electrodeposition efficiency (EE) and NW homogeneity was also verified for δ_b up to 10nm. Such increase in nominal δ_b leads to a consistent growth rate in all pores and consequently a complete and uniform nanopore filling. On the other hand, the decrease in electrodeposition efficiency visible for δ_b > 10nm is related with hydrogen evolution and dielectric breakdown of the insulator layer due to the required high deposition voltages. Non-uniform NW growth is then visible, with the consequent decrease in f _p. The control of the pore filling and length homogeneity of the fabricated 1D metallic nanostructures, combined with the ability to adjust the pore dimensions of PAA, can bring novel approaches for the fabrication of nano-objects and thus exciting new applications
机译:揭示了氧化铝阻挡层厚度(δ_b)对多孔阳极氧化铝(PAA)中Ni纳米线(NWs)的生长的作用。通过改变最终的阳极氧化电压以在纳米孔结构的底部形成树枝状晶体,我们能够优化δ_b(在2-16nm范围内),从而使我们能够获得对于δ_b几乎100%的镍孔填充率(f_p) = 10nm。但是,偏离此最佳δ_b值会导致f_p大幅下降。此外,对于高达10nm的δ_b,也证实了电沉积效率(EE)和NW均匀性的提高。标称δ_b的这种增加导致在所有孔中一致的生长速率,并因此导致完整且均匀的纳米孔填充。另一方面,由于所需的高沉积电压,对于δ_b> 10nm可见的电沉积效率的下降与氢的释放和绝缘体层的介电击穿有关。这样就可以看到不均匀的NW增长,从而导致f _p减小。所制造的一维金属纳米结构的孔填充和长度均质性的控制,以及调节PAA孔尺寸的能力,可以为制造纳米物体带来新颖的方法,从而激发新的应用

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