Oxide nanowires were directly grown on a CuO _x thin film deposited by plasma-enhanced atomic layer deposition without additional metal catalysts. Oxide nanowires would exhibit metalcatalyst-free growth on the CuO _x thin film with oxide materials diffused on the top. Through a focused ion beam and transmission electron microscopy, we could verify that SnO _2 and ZnO nanowires were grown as single-crystalline structures just above the CuO _x thin film. Bottom-gate structural SnO _2 and ZnO nanowire transistors exhibited mobilities of 135.2 and 237.6cm ~2V ~1s ~1, respectively. We anticipate that a variety of large-area and high-density oxide nanowires can be grown at low cost by using the CuO _x thin film.
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