Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix

Pinto S.R.C.; Buljan M.; Marques L.; Martín-Sánchez J.; Conde O.; Chahboun A.; Ramos A.R.; Barradas N.P.; Alves E.; Bernstorff S.; Grenzer J.; Mücklich A.; Ramos M.M.D.; Gomes M.J.M.

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Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix

机译：退火条件对非晶态氧化铝基体中空洞和锗量子点规则晶格形成的影响

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In this work, the influence of air pressure during the annealing of Ge quantum dot (QD) lattices embedded in an amorphous Al _2O _3 matrix on the structural, morphological and compositional properties of the film is studied. The formation of a regularly ordered void lattice after performing a thermal annealing process is explored. Our results show that both the Ge desorption from the film and the regular ordering of the QDs are very sensitive to the annealing parameters. The conditions for the formation of a void lattice, a crystalline Ge QD lattice and a disordered QD lattice are presented. The observed effects are explained in terms of oxygen interaction with the Ge present in the film.

机译：在这项工作中，研究了嵌入非晶Al _2O _3基质中的Ge量子点（QD）晶格退火期间的气压对薄膜结构，形态和组成特性的影响。探索了在执行热退火过程之后规则排列的空隙晶格的形成。我们的结果表明，薄膜中的Ge脱附和QD的规则排列对退火参数非常敏感。给出了形成空隙晶格，晶体Ge QD晶格和无序QD晶格的条件。观察到的效果是通过氧与薄膜中存在的Ge的相互作用来解释的。

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《Nanotechnology》 |2012年第40期|共9页
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Pinto S.R.C.; Buljan M.; Marques L.; Martín-Sánchez J.; Conde O.; Chahboun A.; Ramos A.R.; Barradas N.P.; Alves E.; Bernstorff S.; Grenzer J.; Mücklich A.; Ramos M.M.D.; Gomes M.J.M.;
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1. Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix [J] . Pinto S.R.C., Buljan M., Marques L., Nanotechnology . 2012,第40期

机译：退火条件对非晶态氧化铝基体中空洞和锗量子点规则晶格形成的影响
2. Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix [J] . Buljan M., Roshchupkina O., ?anti? A., Journal of Applied Crystallography . 2013,第3期

机译：非晶态氧化铝基体中Ge量子点三维各向异性晶格的生长
3. Influence of annealing conditions on the structural and photoluminescence properties of Ge quantum dot lattices in a continuous Ge + Al_2O_3 film [J] . M. Buljan, N. Radic, I. Bogdanovic-Radovic, Physica status solidi . 2013,第8期

机译：退火条件对连续Ge + Al_2O_3薄膜中Ge量子点晶格的结构和光致发光性能的影响
4. Influence of oxidation conditions on the formation of InAs quantum dots in an aluminium oxide matrix [C] . D.A. Tenne, O.R. Bajutova, A.K. Bakarov, Conference on advanced topics in optoelectronics, microelectronics, and nanotechnologies . 2003

机译：氧化条件对氧化铝基质中量子点形成的影响
5. Nucleic Acid-Driven Quantum Dot-Based Lattice Formations for Biomedical Applications. [D] . Roark, Brandon Kyle. 2017

机译：生物医学应用中的核酸驱动的基于量子点的晶格形成。
6. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix [O] . Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, 2014

机译：氢等离子体处理非晶碳化硅基体减少硅量子点超晶格结构缺陷的研究
7. Influence of annealing conditions on formation of regular lattices of voids and Ge quantum dots in amorphous alumina matrix [O] . Pinto S. R. C., Buljan Maja, Marques L., 2012

机译：退火条件对非晶态氧化铝基体中空洞和Ge量子点规则晶格形成的影响

Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix

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