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Direct growth of SnO _2 nanowires on WO _x thin films

机译：Sn _2纳米线在WO _x薄膜上的直接生长

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摘要

Single-crystalline SnO _2 nanowires were directly grown on an amorphous WO _x thin film, leading to the formation of nano-scale contacts with a near-Ohmic conductance. The WO _x facilitated the diffusion of SnO _2 on the surface of the WO _x thin film, and SnO _2 nanowires could be uniformly grown from the diffused SnO _2. The contact properties between the metallic WO _x and a semiconducting SnO _2 nanowire were examined. The resistivity of the WO _x-SnO _2 nanowire contact was found to be approximately 2.6×10 ~5Ωcm ~2. This was comparable to the resistivity of a contact between an Al electrode and a SnO _2 nanowire with a contact area. A fabricated SnO _2 nanowire transistor exhibited an on-current of approximately 386nA, a threshold voltage of approximately 3.8V, a subthreshold slope of approximately 0.26V/dec and a field-effect mobility of approximately 43cm ~2V ~1s ~1.
机译：单晶SnO _2纳米线直接生长在非晶WO _x薄膜上，导致形成具有近欧姆电导的纳米级接触。 WO _x促进了Sn _2在WO _x薄膜表面的扩散，并且SnO _2纳米线可以从扩散的SnO _2均匀生长。检查了金属WO _x与半导体SnO _2纳米线之间的接触特性。发现WO _x-SnO _2纳米线接触的电阻率约为2.6×10〜5Ωcm〜2。这与具有接触面积的Al电极和SnO _2纳米线之间的接触的电阻率相当。制成的SnO _2纳米线晶体管的导通电流约为386nA，阈值电压约为3.8V，亚阈值斜率约为0.26V / dec，场效应迁移率约为43cm〜2V〜1s〜1。

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