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Bismuth nanowires with very low lattice thermal conductivity as revealed by the 3o method

机译：3o方法显示的铋纳米线的晶格导热率非常低

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摘要

Thermoelectric materials transform temperature gradients to voltages and vise versa. Despite their many advantages, devices based on thermoelectric materials are used today only in a few applications, due to their low efficiency, which is described by the figure of merit ZT. Theoretical studies predict that scaling down these materials to the nanometric scale should enhance their efficiency partially due to a decrease in their lattice thermal conductivity. In this work we determine for the first time the lattice thermal conductivity of 40 nm bismuth (Bi) nanowires (NWs), i.e. NWs with a diameter comparable to the Fermi wavelength of charge carriers in this material. We find a surprisingly low lattice thermal conductivity of 0.13 ± 0.05 W K ~(-1) m~(-1) at 77 K. A quantitative argument, which takes into account several unique properties of Bi, is given to explain this unusual finding.
机译：热电材料将温度梯度转换为电压，反之亦然。尽管具有许多优点，但基于热电材料的设备由于效率低而仅在今天的少数应用中使用，这由性能指标ZT进行了描述。理论研究预测，由于这些材料的晶格热导率降低，将这些材料按比例缩小至纳米级应部分提高其效率。在这项工作中，我们首次确定了40 nm铋（Bi）纳米线（NWs）的晶格热导率，即直径与该材料中载流子的费米波长相当的NW。我们发现在77 K时出乎意料的低的0.13±0.05 W K〜（-1）m〜（-1）的晶格导热率。考虑到Bi的几种独特性质，给出了定量的解释来解释这一不寻常的发现。

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