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Observation of diameter dependent carrier distribution in nanowire-based transistors

机译：纳米线基晶体管中与直径有关的载流子分布的观察

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摘要

The successful implementation of nanowire (NW) based field-effect transistors (FET) critically depends on quantitative information about the carrier distribution inside such devices. Therefore, we have developed a method based on high-vacuum scanning spreading resistance microscopy (HV-SSRM) which allows two-dimensional (2D) quantitative carrier profiling of fully integrated silicon NW-based tunnel-FETs (TFETs) with 2nm spatial resolution. The key elements of our characterization procedure are optimized NW cleaving and polishing steps, the use of in-house fabricated ultra-sharp diamond tips, measurements in high vacuum and a dedicated quantification procedure accounting for the Schottky-like tip-sample contact affected by surface states. In the case of the implanted TFET source regions we find a strong NW diameter dependence of conformality, junction abruptness and gate overlap, quantitatively in agreement with process simulations. In contrast, the arsenic doped drain regions reveal an unexpected NW diameter dependent dopant deactivation. The observed lower drain doping for smaller diameters is reflected in the device characteristics by lower TFET off-currents, as measured experimentally and confirmed by device simulations.
机译：基于纳米线（NW）的场效应晶体管（FET）的成功实施关键取决于有关此类器件内部载流子分布的定量信息。因此，我们已经开发了一种基于高真空扫描扩展电阻显微镜（HV-SSRM）的方法，该方法可以对具有2nm空间分辨率的完全集成的基于硅NW的隧道FET（TFET）进行二维（2D）定量载流子分析。我们表征过程的关键要素是优化的NW劈裂和抛光步骤，使用内部制造的超锐利金刚石尖端，在高真空下进行的测量以及专用的量化过程，这些过程说明了受表面影响的类似于肖特基的尖端样品接触状态。在植入的TFET源极区域的情况下，我们发现与制程模拟相吻合的是，NW直径对保形性，结突变性和栅极重叠的依赖性很大。相比之下，砷掺杂的漏极区显示出意外的NW直径依赖性掺杂剂失活。通过较小的TFET关断电流，可以在较小的器件特性中反映出观察到的较小直径的较低漏极掺杂，这是通过实验测量并通过器件仿真得到证实的。

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