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Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

机译：通过低损伤等离子体处理产生的用于闪存应用的氟化纳米晶体可调节带隙能量

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摘要

A plasma system with a complementary filter to shield samples from damage during tetrafluoromethane (CF 4) plasma treatment was proposed in order to incorporate fluorine atoms into gadolinium oxide nanocrystals (Gd 2O 3-NCs) for flash memory applications. X-ray photoelectron spectroscopy confirmed that fluorine atoms were successfully introduced into the Gd 2O 3-NCs despite the use of a filter in the plasma-enhanced chemical vapour deposition system to shield against several potentially damaging species. The number of incorporated fluorine atoms can be controlled by varying the treatment time. The optimized memory window of the resulting flash memory devices was twice that of devices treated by a filterless system because more fluorine atoms were incorporated into the Gd 2O 3-NCs film with very little damage. This enlarged the bandgap energy from 5.48 to 6.83eV, as observed by ultraviolet absorption measurements. This bandgap expansion can provide a large built-in electric field that allows more charges to be stored in the Gd 2O 3-NCs. The maximum improvement in the retention characteristic was >60%. Because plasma damage during treatment is minimal, maximum fluorination can be achieved. The concept of simply adding a filter to a plasma system to prevent plasma damage exhibits great promise for functionalization or modification of nanomaterials for advanced nanoelectronics while introducing minimal defects.
机译：为了将氟原子掺入氧化oxide纳米晶体（Gd 2O 3-NCs）中，提出了一种带有互补过滤器的等离子体系统，该系统可以防止样品在四氟甲烷（CF 4）等离子体处理过程中受到损坏。 X射线光电子能谱证实，尽管在等离子增强化学气相沉积系统中使用了过滤器以屏蔽几种潜在的有害物质，但氟原子已成功引入Gd 2O 3-NCs中。可以通过改变处理时间来控制引入的氟原子的数量。最终的闪存设备的优化存储窗口是无过滤系统处理的设备的两倍，因为更多的氟原子被掺入Gd 2O 3-NCs膜中而受到的损害很小。如通过紫外吸收测量所观察到的，这将带隙能量从5.48扩大到6.83eV。带隙扩展可以提供一个较大的内置电场，该电场可以将更多的电荷存储在Gd 2O 3-NC中。保留特性的最大改善是> 60％。由于治疗期间的血浆损害最小，因此可以实现最大程度的氟化。简单地在等离子体系统中添加一个过滤器以防止等离子体损坏的概念展现了用于先进纳米电子技术的纳米材料的功能化或改性的巨大前景，同时引入了最少的缺陷。

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