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首页> 外文期刊>Nanotechnology >ZnO dense nanowire array on a film structure in a single crystal domain texture for optical and photoelectrochemical applications
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ZnO dense nanowire array on a film structure in a single crystal domain texture for optical and photoelectrochemical applications

机译：ZnO密集纳米线阵列在单晶域纹理的膜结构上，用于光学和光电化学应用

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摘要

A single crystal domain texture quality (a unique in-plane and out-of-plane crystalline orientation over a large area) ZnO nanostructure of a dense nanowire array on a thick film has been homogeneously synthesized on a-plane sapphire substrates over large areas through a one-step chemical vapor deposition (CVD) process. The growth mechanism is clarified: a single crystal [] oriented ZnAl_(2O)4 buffer layer was formed at the ZnO film and the a-plane sapphire substrate interface via a diffusion reaction process during the CVD process, providing improved epitaxial conditions that enable the synthesis of the high crystalline quality ZnO nanowire array on a film structure. The high optoelectronic quality of the ZnO nanowire array on a film sample is evidenced by the free exitonic emissions in the low-temperature photoluminescence spectroscopy. A carrier density of ～10~(17) cm~(-3) with an n-type conductivity of the ZnO nanowire array on a film sample is obtained by electrochemical impedance analysis. Finally, the ZnO nanowire array on a film sample is demonstrated to be an ideal template for a further synthesis of a single crystal quality ZnO-ZnGa_2O_4 core-shell nanowire array on a film structure. The fabricated ZnO-ZnGa_2O_4 sample revealed an enhanced anticorrosive ability and photoelectrochemical performance when used as a photoanode in a photoelectrochemical water splitting application.
机译：通过在a面蓝宝石衬底上大面积均匀地合成了厚膜上致密纳米线阵列的单晶域纹理质量（在大面积上具有独特的面内和面外晶体取向）的ZnO纳米结构。一步骤化学气相沉积（CVD）工艺。阐明了生长机理：在CVD工艺中，通过扩散反应工艺，在ZnO膜和a面蓝宝石衬底界面处形成了单晶[]取向的ZnAl_（2O）4缓冲层，从而提供了改善的外延条件，使得在膜结构上合成高质量的ZnO纳米线阵列。薄膜样品上ZnO纳米线阵列的高光电质量由低温光致发光光谱法中的自由离子发射来证明。通过电化学阻抗分析获得了ZnO纳米线阵列在薄膜样品上具有n型导电性的〜10〜（17）cm〜（-3）的载流子密度。最后，薄膜样品上的ZnO纳米线阵列被证明是进一步合成薄膜结构上单晶品质ZnO-ZnGa_2O_4核-壳纳米线阵列的理想模板。制成的ZnO-ZnGa_2O_4样品在光电化学水分解应用中用作光阳极时，具有增强的抗腐蚀能力和光电化学性能。

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