SiC nanowires (NWs) are commonly prepared in a Si-C-N system, but its formation mechanism is not fully understood. High resolution transmission electron microscopy and electron energy loss spectroscopy observation recorded the growth process of how Si _3N _4 NWs were transformed into SiC NWs, and demonstrated the validity of an intermediate template directed SiC NW growth via carbothermal reduction of intermediate Si _3N _4 NWs in a Si-C-N system. Based on this discovery, an intermediate-template growth mechanism of SiC NWs was proposed.
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