Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors

Choe M.; Park W.; Kang J.-W.; Jeong S.; Hong W.-K.; Lee B.H.; Park S.-J.; Lee T.

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Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors

机译：ZnO纳米线场效应晶体管中栅极偏置应力引起的阈值电压不稳定性的研究

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We investigated the threshold voltage instability induced by gate bias (V _G) stress in ZnO nanowire (NW) field effect transistors (FETs). By increasing the V _G sweep ranges and repeatedly measuring the electrical characteristics of the ZnO NW FETs, the V _G stress was produced in the dielectric layer underneath the ZnO NW. Consequently, the electrical conductance of the ZnO NW FETs decreased, and the threshold voltage shifted towards the positive V _G direction. This threshold voltage instability induced by the V _G stress is associated with the trapping of charges in the interface trap sites located in the ZnO NW-dielectric interface. Our study will be helpful for understanding the stability of ZnO NW FETs during repetitive operations.

机译：我们研究了由ZnO纳米线（NW）场效应晶体管（FET）中的栅极偏置（V _G）应力引起的阈值电压不稳定性。通过增加V _G扫描范围并重复测量ZnO NW FET的电特性，在ZnO NW下方的介电层中会产生V _G应力。因此，ZnO NW FET的电导率降低，并且阈值电压向正V _G方向偏移。由V_G应力引起的该阈值电压不稳定性与电荷在位于ZnO NW-电介质界面中的界面俘获位点中的俘获有关。我们的研究将有助于理解重复操作过程中ZnO NW FET的稳定性。

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《Nanotechnology》 |2012年第48期|共7页
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Choe M.; Park W.; Kang J.-W.; Jeong S.; Hong W.-K.; Lee B.H.; Park S.-J.; Lee T.;
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1. Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors [J] . Choe M., Park W., Kang J.-W., Nanotechnology . 2012,第48期

机译：ZnO纳米线场效应晶体管中栅极偏置应力引起的阈值电压不稳定性的研究
2. Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress [J] . Sung-Hwan Choi, Min-Koo Han Applied Physics Letters . 2012,第4期

机译：沟道宽度对阈值电压负移的影响，包括高栅极和漏极偏置应力下InGaZnO薄膜晶体管中应力引起的驼峰现象
3. Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress [J] . Ghaffarzadeh Khashayar, Nathan Arokia, Robertson John, Applied Physics Letters . 2010,第11期

机译：Hf-In-Zn-O薄膜晶体管的阈值电压和亚阈值行为由偏压和光应力引起的不稳定性
4. Threshold-voltage instability of polymer thin-film transistor under gate-bias and drain-bias stresses [C] . Liu Y.R., Yu J. L., Lai P. T., IEEE International Conference on Electron Devices and Solid-State Circuits . 2008

机译：栅极 - 偏压下聚合物薄膜晶体管的阈值 - 电压不稳定性和漏极偏压应力
5. Raman spectroscopy and electrical transport in suspended carbon nanotube field effect transistors under applied bias and gate voltages. [D] . Bushmaker, Adam W. 2010

机译：在施加的偏压和栅极电压下，悬浮碳纳米管场效应晶体管中的拉曼光谱和电传输。
6. Effects of Applied Voltages on the Charge Transport Properties in a ZnO Nanowire Field Effect Transistor [O] . Jongwon Yoon, Fu Huang, Ki Hoon Shin, 2020

机译：施加电压对ZnO纳米线场效应晶体管中电荷传输特性的影响
7. Threshold-voltage instability of polymer thin-film transistor under gate-bias and drain-bias stresses [O] . Liu Y, Lai PT, Liao R, 2008

机译：栅极偏压和漏极偏压应力下聚合物薄膜晶体管的阈值电压不稳定性

Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors

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