Graphene-like metal-on-silicon field-effect transistor

Dragoman M.; Konstantinidis G.; Tsagaraki K.; Kostopoulos T.; Dragoman D.; Neculoiu D.

首页> 外文期刊>Nanotechnology >Graphene-like metal-on-silicon field-effect transistor

【24h】

Graphene-like metal-on-silicon field-effect transistor

机译：类石墨烯的硅基金属场效应晶体管

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper presents a field-effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. The gate length is L=2μm, its width is W=180μm, and the source-drain separation is 188μm, the role of the gate dielectric being played by the surface states of the ultrathin metal layer. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar to a field-effect transistor based on graphene. The drain current is 2mA at a drain voltage of 3V and a gate voltage of 1.07V, while the transconductance is 0.6mS for a drain voltage of 6V and a gate voltage of 1V. However, the transport in this transistor is not ambipolar, as in graphene, but unipolar.

机译：本文提出了一种场效应晶体管，其沟道由二维电子气组成，该沟道位于Ni的超薄金属膜与p型Si（111）衬底之间的界面处。栅极长度为L =2μm，宽度为W =180μm，源极-漏极间距为188μm，栅极电介质的作用由超薄金属层的表面状态发挥。我们已经证明了二维电子气通道是由栅极电压调制的。漏极电流对漏极电压的依赖性没有饱和区，类似于基于石墨烯的场效应晶体管。在3V的漏极电压和1.07V的栅极电压下，漏极电流为2mA，而在6V的漏极电压和1V的栅极电压下，跨导为0.6mS。然而，该晶体管中的传输不是石墨烯中的双极性，而是单极性。

著录项

来源
《Nanotechnology》 |2012年第30期|共5页
作者
Dragoman M.; Konstantinidis G.; Tsagaraki K.; Kostopoulos T.; Dragoman D.; Neculoiu D.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Graphene-like metal-on-silicon field-effect transistor [J] . Dragoman M., Konstantinidis G., Tsagaraki K., Nanotechnology . 2012,第30期

机译：类石墨烯的硅基金属场效应晶体管
2. Erratum ‘Benefits of asymmetric underlap dual-k spacer hybrid fin field-effect transistor over bulk fin field-effect transistor’ [J] . Circuits, Devices & Systems, IET . 2016,第6期

机译：勘误“不对称的下重叠双k间隔混合鳍片场效应晶体管优于块状鳍片场效应晶体管”
3. Benefits of asymmetric underlap dual-k spacer hybrid fin field-effect transistor over bulk fin field-effect transistor [J] . Kumar Prasannajit Pradhan, Kumar Prasannajit Sahu Circuits, Devices & Systems, IET . 2016,第5期

机译：相较于体鳍式场效应晶体管，非对称重叠双k间隔混合鳍式场效应晶体管的优势
4. Comparison between bulk and field-effect mobility in polyfluorene copolymer field-effect transistors [C] . Ruth Rawcliffe, Donal D. C. Bradley, Alasdair J. Campbell Conference on Organic Field Effect Transistors II; Aug 3-4, 2003; San Diego, California, USA . 2003

机译：聚芴共聚物场效应晶体管中体迁移率和场效应迁移率的比较
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors [O] . N. R. Pradhan, D. Rhodes, S. Memaran, -1

机译：少数分层p-WSe2场效应晶体管中的霍尔效应和场效应迁移率
7. Graphene-like metal-on-silicon field-effect transistor [O] . M Dragoman, G Konstantinidis, K Tsagaraki, 2012

机译：石墨烯金属上的硅片场效应晶体管
8. Radiation effects on junction field-effect transistors (JFETS), MOSFETs, and bipolar transistors, as related to SSC circuit design. [R] . Kennedy, E. J., Alley, G. T., Britton, C. L., 1990

机译：与ssC电路设计相关的辐射对结型场效应晶体管（JFETs），mOsFET和双极晶体管的影响。

Graphene-like metal-on-silicon field-effect transistor

摘要

著录项

相似文献

相关主题

期刊订阅