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Control of thickness uniformity and grain size in graphene films for transparent conductive electrodes

机译：控制透明导电电极石墨烯薄膜的厚度均匀性和晶粒尺寸

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摘要

Large-scale and transferable graphene films grown on metal substrates by chemical vapor deposition (CVD) still hold great promise for future nanotechnology. To realize the promise, one of the key issues is to further improve the quality of graphene, e.g., uniform thickness, large grain size, and low defects. Here we grow graphene films on Cu foils by CVD at ambient pressure, and study the graphene nucleation and growth processes under different concentrations of carbon precursor. On the basis of the results, we develop a two-step ambient pressure CVD process to synthesize continuous single-layer graphene films with large grain size (up to hundreds of square micrometers). Scanning electron microscopy and Raman spectroscopy characterizations confirm the film thickness and uniformity. The transferred graphene films on cover glass slips show high electrical conductivity and high optical transmittance that make them suitable as transparent conductive electrodes. The growth mechanism of CVD graphene on Cu is also discussed, and a growth model has been proposed. Our results provide important guidance toward the synthesis of high quality uniform graphene films, and could offer a great driving force for graphene based applications.
机译：通过化学气相沉积（CVD）在金属基底上生长的大规模可转移石墨烯薄膜仍然对未来的纳米技术具有广阔的前景。为了实现这一承诺，关键问题之一是进一步提高石墨烯的质量，例如，厚度均匀，晶粒大，缺陷少。在这里，我们在环境压力下通过CVD在铜箔上生长石墨烯薄膜，并研究了在不同浓度的碳前驱体下石墨烯的成核和生长过程。根据结果​​，我们开发了一种两步式常压CVD工艺，以合成具有大晶粒尺寸（最大数百平方微米）的连续单层石墨烯薄膜。扫描电子显微镜和拉曼光谱表征证实了膜的厚度和均匀性。在盖玻片上转移的石墨烯薄膜显示出高电导率和高透光率，使其适合用作透明导电电极。还讨论了CVD石墨烯在Cu上的生长机理，并提出了生长模型。我们的结果为合成高质量均匀的石墨烯薄膜提供了重要的指导，并可能为基于石墨烯的应用提供强大的驱动力。

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