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Fabrication of three-dimensional ordered nanodot array structures by a thermal dewetting method

机译：热去湿法制备三维有序纳米点阵列结构

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摘要

A new fabrication method for three-dimensional nanodot arrays with low cost and high throughput is developed in this paper. In this process, firstly a 2D nanodot array is fabricated by combination of top-down and bottom-up approaches. A nanoplastic forming technique is utilized as the top-down approach to fabricate a groove grid pattern on an Au layer deposited on a substrate, and self-organization by thermal dewetting is employed as the bottom-up approach. On the first-layer nanodot array, SiO _2 is deposited as a spacer layer. Au is then deposited on the spacer layer and thermal dewetting is conducted to fabricate a second-layer nanodot array. The effective parameters influencing dot formation on the second layer, including Au layer thickness and SiO _2 layer thickness, are studied. It is demonstrated that a 3D nanodot array of good vertical alignment is obtained by repeating the SiO _2 deposition, Au deposition and thermal dewetting. The mechanism of the dot agglomeration process is studied based on geometrical models. The effects of the spacer layer thickness and Au layer thickness on the morphology and alignment of the second-layer dots are discussed.
机译：本文提出了一种低成本，高通量的三维纳米点阵列的制备方法。在此过程中，首先通过结合自上而下和自下而上的方法来制造二维纳米点阵列。纳米塑料形成技术被用作自上而下的方法，以在沉积在基板上的Au层上制造沟槽栅格图案，并且通过热脱湿进行的自组织被用作自下而上的方法。在第一层纳米点阵列上，沉积SiO 2作为间隔层。然后将金沉积在间隔层上，并进行热去湿以制造第二层纳米点阵列。研究了影响第二层上点形成的有效参数，包括Au层厚度和SiO _2层厚度。结果表明，通过重复进行SiO _2沉积，Au沉积和热脱湿，可以获得具有良好垂直取向的3D纳米点阵列。基于几何模型研究了点团聚过程的机理。讨论了间隔层厚度和金层厚度对第二层点的形态和排列的影响。

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