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ZnSe nanowire/Si p-n heterojunctions: Device construction and optoelectronic applications

机译：ZnSe纳米线/ Si p-n异质结：器件构造和光电应用

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Nano-heterojunctions will play essential roles in future nano-electronic and nano-optoelectronic devices. However, their extensive applications are impeded by the complicated multi-step growth method involved and the requirements for precise nanowire (NW) positioning/alignment. Here, we develop a facile method to fabricate zinc selenide NW (ZnSeNW)/silicon p-n heterojunctions by transferring the p-type ZnSeNWs onto a SiO2/Si substrate with pre-defined Si windows; the physical contact of the NWs with the Si substrate via van der Waals force leads to the formation of heterojunctions. Electrical measurements on the heterojunctions reveal their excellent diode characteristics with a relatively small ideality factor of ～1.95, high rectification ratio of ～10~6, and low turn-on voltage of ～0.9 V. Moreover, heterojunction field-effect transistors are constructed based on the p-ZnSeNWs and show remarkable performance enhancement compared to the device counterparts with a metal-oxide-semiconductor field-effect transistor structure. The enhanced gate coupling between the NW conduction channel and the heterojunction gate is believed to be responsible for the high device performance. Significantly, under AM 1.5G light illumination, the heterojunctions exhibit pronounced photovoltaic behavior, yielding a power conversion efficiency of ～1.8%. Our results demonstrate the great potential of ZnSeNW/Si p-n heterojunctions in high-performance nano-device applications.
机译：纳米异质结将在未来的纳米电子和纳米光电器件中发挥重要作用。但是，由于涉及复杂的多步生长方法以及对精确纳米线（NW）定位/对准的要求，它们的广泛应用受到了阻碍。在这里，我们开发了一种通过将p型ZnSeNWs转移到具有预定Si窗口的SiO2 / Si衬底上来制造硒化锌NW（ZnSeNW）/硅p-n异质结的简便方法。 NW通过范德华力与Si衬底的物理接触导致异质结的形成。异质结的电学测量显示出其优异的二极管特性，具有相对较小的理想因数〜1.95，高整流比〜10〜6和低导通电压〜0.9V。此外，基于该结构构建了异质结场效应晶体管与具有金属氧化物半导体场效应晶体管结构的器件相比，p-ZnSeNWs具有更好的性能增强。 NW传导沟道和异质结栅极之间的增强的栅极耦合被认为是高器件性能的原因。值得注意的是，在AM 1.5G光照下，异质结表现出明显的光伏行为，产生约1.8％的功率转换效率。我们的结果证明了ZnSeNW / Si p-n异质结在高性能纳米器件应用中的巨大潜力。

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