Fabrication of crystal α-Si _3N _4/Si-SiO _x core-shell/Au-SiO _x peapod-like axial double heterostructures for optoelectronic applications

Nie T.; Chen Z.-G.; Wu Y.; Guo Y.; Zhang J.; Fan Y.; Yang X.; Jiang Z.; Zou J.

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Fabrication of crystal α-Si _3N _4/Si-SiO _x core-shell/Au-SiO _x peapod-like axial double heterostructures for optoelectronic applications

机译：晶体α-Si_3N _4 / Si-SiO _x核壳/ Au-SiO _x豆荚状轴向双异质结构的制备

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Novel crystal α-Si _3N _4/Si-SiO _x core-shell/Au-SiO _x peapod-like axial double heterostructural nanowires were obtained by directly annealing a Au covered SiO _2 thin film on a Si substrate. Our extensive electron microscopic investigation revealed that the α-Si _3N _4 sections with a 101 growth direction were grown first, followed by growth of the Si-SiO _x core-shell sections and finally growth of the Au-SiO _x peapod-like sections. Through a series of systematically comparative experiments, a temperature-dependent multi-step vapor-liquid-solid growth mechanism is proposed. Room temperature photoluminescence measurement of individual nanowires reveals two emission peaks (410 and 515nm), indicating their potential applications in light sources, laser or light emitting display devices.

机译：通过在Si衬底上直接退火Au覆盖的SiO _2薄膜，获得了新型晶体α-Si_3N _4 / Si-SiO _x核壳/ Au-SiO _x豆荚状轴向双异质纳米线。我们广泛的电子显微镜研究表明，首先生长具有101个生长方向的α-Si_3N _4截面，然后生长Si-SiO _x核-壳截面，最后生长Au-SiO _x豆荚状截面。通过一系列系统的比较实验，提出了一种与温度有关的多步气液固生长机理。单个纳米线的室温光致发光测量显示出两个发射峰（410和515nm），表明它们在光源，激光或发光显示设备中的潜在应用。

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《Nanotechnology》 |2012年第30期|共9页
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Nie T.; Chen Z.-G.; Wu Y.; Guo Y.; Zhang J.; Fan Y.; Yang X.; Jiang Z.; Zou J.;
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1. Fabrication of crystal α-Si _3N _4/Si-SiO _x core-shell/Au-SiO _x peapod-like axial double heterostructures for optoelectronic applications [J] . Nie T., Chen Z.-G., Wu Y., Nanotechnology . 2012,第30期

机译：晶体α-Si_3N _4 / Si-SiO _x核壳/ Au-SiO _x豆荚状轴向双异质结构的制备
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7. Design and synthesis of nanocrystal heterostructures for optoelectronic applications [O] . Halpert Jonathan E 2008

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Fabrication of crystal α-Si _3N _4/Si-SiO _x core-shell/Au-SiO _x peapod-like axial double heterostructures for optoelectronic applications

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