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Repeatable switching of the bending direction of ZnO nanoneedles by ion beams

机译：离子束可重复切换ZnO纳米针的弯曲方向

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We studied the ion beam bending of ZnO nanoneedles to find the dependence of their bending direction on the ion beam energy and to clarify the bending mechanism. Through gallium focused ion beam (FIB) bending, the stems of the nanoneedles were found to be bent to the direction of the ion beam source for ion beam energies of 30keV whereas they were bent in the opposite direction at ion energies lower than 20keV. We found for the first time that the bending direction of ZnO nanoneedles could be changed by repeated switching of the ion beam energy between lower and higher energy levels, and that the thin tip parts of the nanoneedles were bent toward to the ion beam source like the higher energy bending mode during the process of lower energy bending below 20keV. Through high resolution transmission electron microscopy (HRTEM) observations of the microstructure of a nanoneedle, bent by 30keV higher energy ion beams, based on the atomic scale, we found that more edge dislocations were created in the rear side, deeper than the central plane of the nanoneedle, than the front side and that each edge dislocation added an extra lattice plane in this region. These observations clearly showed that the bent nanoneedles were plastically deformed by the edge dislocations created by the ion beams.
机译：我们研究了ZnO纳米针的离子束弯曲，以发现其弯曲方向对离子束能量的依赖性，并阐明其弯曲机理。通过镓聚焦离子束（FIB）弯曲，发现对于30keV的离子束能量，纳米针的茎向离子束源方向弯曲，而当离子能量低于20keV时，纳米针的茎向相反方向弯曲。我们首次发现，可以通过在低能级和高能级之间反复切换离子束能量来改变ZnO纳米针的弯曲方向，并且纳米针的细尖端部分会像离子束源一样向离子束源弯曲。低于20keV的低能弯曲过程中的高能弯曲模式。通过高分辨率透射电子显微镜（HRTEM）对纳米针微观结构的观察，该纳米针被30keV高能离子束弯曲，基于原子尺度，我们发现在后侧产生了更多的位错，其深度超过了中心平面。纳米针，而不是正面，并且每个边缘位错都在该区域中添加了额外的晶格平面。这些观察清楚地表明，弯曲的纳米针由于离子束产生的边缘错位而塑性变形。

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