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Nanostructured arrays of stacked graphene sheets

机译：堆叠石墨烯片的纳米结构阵列

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Molecular oxygen etching of HOPG surfaces prepatterned by Ga ~+ focused-ion-beam irradiation (FIB) has been used to generate large-area arrays of nanometer-sized graphite blocks. AFM and SEM imaging show that structures with lateral sizes down to 100nm and heights of between 30 and 55nm can be routinely fabricated. The trenches separating the graphite blocks form in the early oxidation stages via preferential gasification (into CO and CO _2) of the gridlike amorphized carbon regions written by FIB. In the later oxidative etching stages, gasification of the graphite nanoprism faces laterally terminating the graphite blocks becomes the major reaction channel. Correspondingly, graphite blocks are (further) reduced in lateral extent while the trenches in between are widened. Raman and photoionization spectroscopies indicate that the quality of the topmost nG sheet(s) covering the blocks also decreases with increasing etching time - as the size and lateral density of defect-mediated etch pits increases. nG block arrays are useful substrates with which to probe the size-dependent properties of nanographene, as they comprise large numbers of uniform sheets (ca. 4×10 ~(10)cm ~2 for an array of 0.5×0.5μm ~2) thus allowing for the application of area-integrating spectroscopic methods. We demonstrate this by examining the Raman features of nG block arrays which include a graphene-rim-region fingerprint mode. Individual nG sheets can be exfoliated from nG stacks by means of electron-irradiation-induced charging. We have explored a number of printing/manipulation strategies aimed at controllable electromechanical transfer of nG sheet arrays to silicon wafers.
机译：通过Ga〜+聚焦离子束辐照（FIB）预先图案化HOPG表面的分子氧蚀刻已用于生成大面积的纳米尺寸石墨块阵列。 AFM和SEM成像表明，可以常规制造横向尺寸低至100nm，高度在30至55nm之间的结构。分离石墨块的沟槽在早期氧化阶段通过FIB编写的网格状非晶碳区域的优先气化（转化为CO和CO _2）形成。在随后的氧化蚀刻阶段，石墨纳米棱柱面的气化横向终止石墨块成为主要的反应通道。相应地，石墨块的横向范围进一步减小，而其间的沟槽变宽。拉曼光谱和光电离光谱表明，覆盖块的最上面的nG片的质量也随着蚀刻时间的增加而降低-随着缺陷介导的蚀刻坑的尺寸和横向密度的增加。 nG块阵列是有用的基板，可用来探测纳米石墨烯的尺寸相关特性，因为它们包含大量均匀的薄片（0.5×0.5μm〜2的阵列大约为4×10〜（10）cm〜2）因此可以应用面积积分光谱法。我们通过检查包括石墨烯边缘区域指纹模式的nG块阵列的拉曼特征来证明这一点。各个nG薄片可以通过电子辐照诱导的电荷从nG堆叠中剥离。我们已经探索了许多旨在将nG薄片阵列可控地机电转移到硅片的印刷/操作策略。

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