• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Indium tin oxide nanowhisker morphology control by vapour-liquid-solid glancing angle deposition
【24h】

Indium tin oxide nanowhisker morphology control by vapour-liquid-solid glancing angle deposition

机译：汽-液-固掠射角沉积控制氧化铟锡纳米晶须的形貌

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A new growth technique for indium tin oxide nanowhiskers with increased control over feature size and spacing is reported. The technique is based on a unique combination of self-catalysed vapour-liquid-solid (VLS) growth and glancing angle deposition (GLAD). This VLSGLAD technique provides enhanced control over nanowhisker morphology as the effect of typical VLS growth parameters (e.g.flux rate, temperature) is amplified at large deposition angles characteristic of GLAD. Spatial modulation of the collimated growth flux controls trunk width, number and orientation of branches, and overall nanowhisker density. Here we report the influence of growth conditions (including deposition angle, flux rate, nominal pitch and substrate temperature) on nanowhisker morphology, with specific focus on the effect of large deposition angles. Sheet resistance and transmission of the films were measured to characterize their performance as transparent conductive oxides. Hybrid nanostructured films grown in this study include high surface area nanowhiskers protruding from a conductive film, ideal for transparent conductive electrode applications.
机译：据报道，一种新的铟锡氧化物纳米晶须生长技术具有对特征尺寸和间距的增强控制。该技术基于自催化蒸气-液体-固体（VLS）生长和掠射角沉积（GLAD）的独特结合。由于典型的VLS生长参数（例如通量率，温度）的影响在GLAD的较大沉积角度下得到放大，因此这种VLSGLAD技术可增强对纳米晶须形态的控制。准直生长通量的空间调制控制主干宽度，分支的数量和方向以及整体纳米须晶密度。在这里，我们报告了生长条件（包括沉积角，通量速率，标称节距和衬底温度）对纳米晶须形态的影响，特别关注了大沉积角的影响。测量薄膜的薄层电阻和透射率以表征其作为透明导电氧化物的性能。在这项研究中生长的混合纳米结构薄膜包括从导电薄膜突出的高表面积纳米晶须，非常适合透明导电电极应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号