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首页> 外文期刊>Nanotechnology >Faceting, composition and crystal phase evolution in IIIV antimonide nanowire heterostructures revealed by combining microscopy techniques
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Faceting, composition and crystal phase evolution in IIIV antimonide nanowire heterostructures revealed by combining microscopy techniques

机译：结合显微镜技术揭示IIIV锑纳米线异质结构的刻面，组成和晶相演变

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摘要

IIIV antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs _(1x)Sb _x nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs _(1x)Sb _x heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a coreshell structure, with an Sb-rich shell.
机译：IIIV锑纳米线由于其最佳的材料性能，成为运输物理学，纳米电子学和长波长光电器件中最有趣的半导体之一。为了研究其复杂的晶体结构演变，刻面和组成，我们报告了金核三元InAs / InAs _（_）的组合扫描电子显微镜（SEM），透射电子显微镜（TEM）和扫描隧道显微镜（STM）研究。 1x）Sb _x纳米线异质结构通过分子束外延生长。 SEM显示了一般的形态和刻面，TEM显示了内部晶体结构和三元组成，而STM成功地用于表征无氧化物的纳米线侧壁，包括纳米刻面的形态，原子结构和表面组成。这些技术的互补使用允许纳米线的形态和结构特性与生长过程中掺入的Sb量相关。通过中间的堆垛层错和准周期孪生机制，向InAs中添加微量的Sb可使晶体结构从完美的纤锌矿变为完美的锌共混物。此外，在InAs / InAs_（1x）Sb_x异质结构纳米线的轴向生长过程中添加Sb会在两个段上产生明显的共形横向过度生长，导致自发形成具有富Sb壳的核壳结构。

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