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Site-specific nucleation and controlled growth of a vertical tellurium nanowire array for high performance field emitters

机译:用于高性能场发射器的垂直碲纳米线阵列的特定位置成核和受控生长

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摘要

We report the controlled growth of highly ordered and well aligned one-dimensional tellurium nanostructure arrays via a one-step catalyst-free physical vapor deposition method. The density, size and fine structures of tellurium nanowires are systematically studied and optimized. Field emission measurement was performed to display notable dependence on nanostructure morphologies. The ordered nanowire array based field emitter has a turn-on field as low as 3.27 V μm-1 and a higher field enhancement factor of 3270. Our finding offers the possibility of controlling the growth of tellurium nanowire arrays and opens up new means for their potential applications in electronic devices and displays.
机译:我们报告通过一步法无催化剂的物理气相沉积方法控制的高度有序和排列良好的一维碲纳米结构阵列的增长。对碲纳米线的密度,大小和精细结构进行了系统的研究和优化。进行场发射测量以显示对纳米结构形态的显着依赖性。基于有序纳米线阵列的场发射器具有低至3.27 Vμm-1的导通场和更高的3270场增强因子。我们的发现为控制碲纳米线阵列的生长提供了可能性,并为其开辟了新的途径在电子设备和显示器中的潜在应用。

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