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Quantum-confined nanowires as vehicles for enhanced electrical transport

机译：量子限制的纳米线作为增强电传输的载体

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Electrical transport in semiconductor nanowires taking quantum confinement and dielectric confinement into account has been studied. A distinctly new route has been employed for the study. The fundamental science underlying the model is based on a relationship between the quantum confinement and the structural disorder of the nanowire surface. The role of surface energy and thermodynamic imbalance in nanowire structural disorder has been described. A model for the diameter dependence of energy bandgap of nanowires has been developed. Ionized impurity scattering, dislocation scattering and acoustic phonon scattering have been taken into account to study carrier mobility. A series of calculations on silicon nanowires show that carrier mobility in nanowires can be greatly enhanced by quantum confinement and dielectric confinement. The electron mobility can, for example, be a factor of 210 higher at room temperature than the mobility in a free-standing silicon nanowire. The calculated results agree well with almost all experimental and theoretical results available in the literature. They successfully explain experimental observations not understood before. The model is general and applicable to nanowires from all possible semiconductors. It is perhaps the first physical model highlighting the impact of both quantum confinement and dielectric confinement on carrier transport. It underscores the basic causes of thin, lowly doped nanowires in the temperature range 200KT500K yielding very high carrier mobility. It suggests that the scattering by dislocations (stacking faults) can be very detrimental for carrier mobility.
机译：已经研究了考虑到量子限制和介电限制的半导体纳米线中的电传输。这项研究采用了一条截然不同的新途径。该模型的基础科学是基于量子约束与纳米线表面结构无序之间的关系。已经描述了表面能和热力学失衡在纳米线结构无序中的作用。已经建立了纳米线的能带隙的直径依赖性的模型。研究载流子迁移率已考虑了电离杂质散射，位错散射和声子声子散射。关于硅纳米线的一系列计算表明，通过量子限制和介电限制可以大大提高纳米线中的载流子迁移率。例如，在室温下，电子迁移率比自立硅纳米线中的迁移率高210倍。计算结果与文献中几乎所有的实验和理论结果吻合良好。他们成功地解释了以前不了解的实验观察结果。该模型是通用模型，适用于所有可能的半导体的纳米线。这也许是第一个突出量子限制和介电限制对载流子传输的影响的物理模型。它强调了200KT500K温度范围内产生低掺杂纳米线的基本原因，从而产生了很高的载流子迁移率。这表明由位错引起的散射（堆垛层错）可能对载流子迁移非常有害。

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    《Nanotechnology》 |2012年第28期|共18页
  • 作者

    Mohammad S.N.;

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