Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

Lin A.; Liang B.L.; Dorogan V.G.; Mazur Yu.I.; Tarasov G.G.; Salamo G.J.; Huffaker D.L.

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Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

机译：强钝化作用对InAs表面量子点杂化结构的性能

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We report on an InAs quantum dot (QD) hybrid structure with a top surface QD layer coupled to two buried QD layers that is highly sensitive to surface passivation. After 180 min of passivation, the photoluminescence (PL) peak of the surface QDs shifts from 1545 to 1275 nm while its intensity decreases by one order of magnitude. Time-resolved PL reveals a significant decrease of carrier tunneling between the QD layers because of the surface state modification by chemical treatment. A simple model with rate equations is used to explain the observed optical performance. Our results show that the optical performance of this hybrid structure is very sensitive to the surface environment, making it a potential candidate for sensing applications.

机译：我们报告了一个InAs量子点（QD）混合结构，其顶部表面QD层耦合到对表面钝化高度敏感的两个掩埋QD层。钝化180分钟后，表面QD的光致发光（PL）峰从1545 nm移至1275 nm，同时其强度降低一个数量级。时间分辨的PL揭示了由于化学处理引起的表面状态改变，QD层之间的载流子隧穿显着减少。具有速率方程的简单模型用于解释观察到的光学性能。我们的结果表明，这种混合结构的光学性能对表面环境非常敏感，使其成为传感应用的潜在候选者。

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《Nanotechnology》 |2013年第7期|共6页
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Lin A.; Liang B.L.; Dorogan V.G.; Mazur Yu.I.; Tarasov G.G.; Salamo G.J.; Huffaker D.L.;
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1. Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure [J] . Lin A., Liang B.L., Dorogan V.G., Nanotechnology . 2013,第7期

机译：强钝化作用对InAs表面量子点杂化结构的性能
2. Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well-Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers [J] . Wojciech Rudno-Rudzinski, Marcin Syperek, Aleksander Marynski, Physica status solidi . 2018,第4期

机译：InAs / InAlGaAs / InP混合量子阱量子点结构的动态特性的控制，该结构设计为1.55μm发射激光器的有源部件
3. Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverage [J] . A. Mandal, U. Verma, S. Chakrabarti Superlattices and microstructures . 2013,第juna期

机译：异位退火对四元合金（InAlGaAs）封盖的InAs / GaAs量子点异质结构的影响，随着生长速率，势垒厚度和种子量子点单层覆盖率的变化，优化了光电和结构性能
4. Structural and Optical Effects of Capping Layer Material and Growth Rate on the Properties of Self-Assembled InAs Quantum Dot Structures [C] . Gabriel Agnello, Vadim Tokranov, Michael Yakimov, Symposium on Progress in Compound Semiconductor Materials-Electronic and Optoelectonic Applications . 2005

机译：封盖层材料的结构和光学效应和生长速率对自组装INAS量子点结构的性质
5. Electronic structure and optical properties of self-assembled InAs quantum dots. [D] . Yang, Weidong. 1999

机译：自组装InAs量子点的电子结构和光学性质。
6. Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures [O] . Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, 2017

机译：变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
7. Analytic many-body potential for InAs/GaAs surfaces and nanostructures : formation energyof InAs quantum dots [O] . Hammerschmidt, Thomas, Kratzer, P., Scheffler, Matthias 2008

机译：InAs / GaAs表面和纳米结构的多体分析势：InAs量子点的形成能

Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

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