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The effects of oxygen on controlling the number of carbon layers in the chemical vapor deposition of graphene on a nickel substrate

机译:氧对控制镍基板上石墨烯化学气相沉积中碳层数的影响

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摘要

While oxygen is typically considered undesirable during the chemical vapor deposition (CVD) of graphene on metal substrates, we demonstrate that suitable amounts of oxygen in the CVD system can in fact improve the uniformity and thickness control of the graphene film. The role of oxygen on the CVD of graphene on a nickel substrate using a propylene precursor was investigated with various surface analytical techniques. It was found that the number of carbon layers in the deposited graphene sample decreases as the concentration of oxygen increases. In particular, single-layer graphene can be easily obtained with an oxygen/propylene ratio of 1/9. In the presence of oxygen, a thin layer of nickel oxide will form on the substrate. The oxide layer decreases the concentration of carbon atoms dissolved in the nickel substrate and results in graphene samples with a decreasing number of carbon layers.
机译:尽管通常认为在石墨烯在金属基板上的化学气相沉积(CVD)过程中不希望有氧气,但我们证明CVD系统中合适量的氧气实际上可以改善石墨烯薄膜的均匀性和厚度控制。通过各种表面分析技术研究了氧在使用丙烯前体的镍基板上石墨烯的CVD中的作用。发现随着氧浓度的增加,沉积的石墨烯样品中的碳层数减少。特别地,可以容易地以1/9的氧/丙烯比获得单层石墨烯。在氧气的存在下,在基板上会形成一层氧化镍薄层。氧化物层降低了溶解在镍基底中的碳原子的浓度,并导致碳层数减少的石墨烯样品。

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