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Application of solution-processed metal oxide layers as charge transport layers for CdSe/ZnS quantum-dot LEDs

机译：溶液处理的金属氧化物层作为CdSe / ZnS量子点LED的电荷传输层的应用

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摘要

We fabricated and characterized quantum-dot light emitting devices (QLEDs) that consisted of a CdSe/ZnS quantum-dot (QD) emitting layer, a hole-transporting nickel oxide (NiO) layer and/or an electron-transporting zinc oxide (ZnO) layer. Both the p-type NiO and n-type ZnO layers were formed by using sol-gel processes. All the fabricated CdSe/ZnS QLEDs showed similar electroluminescence spectra that originated from the green CdSe/ZnS QDs. However, different combinations of hole- and electron-transporting layers resulted in efficiency variations. In addition to the control of the respective concentrations of holes and electrons within a multilayer device structure, which determines the luminance and efficiency of QLEDs, the use of metal oxide layers is advantageous for long-term stability of QLEDs because they are air stable and can block the permeation of water vapor and oxygen in ambient air to a QD emitting layer. Moreover, the wet chemistry processing for their formation makes metal oxide layers attractive for low cost and/or large area manufacture of QLEDs.
机译：我们制造并表征了由CdSe / ZnS量子点（QD）发射层，空穴传输氧化镍（NiO）层和/或电子传输氧化锌（ZnO）组成的量子点发光器件（QLED）。 ）层。通过使用溶胶-凝胶工艺形成p型NiO层和n型ZnO层。所有制造的CdSe / ZnS QLED都显示出类似的电致发光光谱，其起源于绿色CdSe / ZnS QD。然而，空穴传输层和电子传输层的不同组合导致效率变化。除了控制多层器件结构中空穴和电子的各自浓度（决定了QLED的亮度和效率）外，使用金属氧化物层还有助于QLED的长期稳定性，因为它们具有空气稳定性并且可以阻止周围空气中的水蒸气和氧气渗透到QD发射层。此外，用于形成它们的湿化学处理使得金属氧化物层对于QLED的低成本和/或大面积制造而言具有吸引力。

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