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Comparative structural and electronic studies of hydrogen interaction with isolated versus ordered silicon nanoribbons grown on Ag(110)

机译：在Ag（110）上生长的分离的和有序的硅纳米带与氢相互作用的比较结构和电子研究

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摘要

We have investigated the geometry and electronic structure of two different types of self-aligned silicon nanoribbons (SiNRs), forming either isolated SiNRs or a self-assembled 5×2/5×4 grating on an Ag(110) substrate, by scanning tunnelling microscopy and high resolution x-ray photoelectron spectroscopy. At room temperature we further adsorb on these SiNRs either atomic or molecular hydrogen. The hydrogen absorption process and hydrogenation mechanism are similar for isolated or 5×2/5×4 ordered SiNRs and are not site selective; the main difference arises from the fact that the isolated SiNRs are more easily attacked and destroyed faster. In fact, atomic hydrogen strongly interacts with any Si atoms, modifying their structural and electronic properties, while molecular hydrogen has first to dissociate. Hydrogen finally etches the Si nanoribbons and their complete removal from the Ag(110) surface could eventually be expected.
机译：我们已经研究了两种不同类型的自对准硅纳米带（SiNR）的几何结构和电子结构，它们通过扫描隧道在Ag（110）衬底上形成隔离的SiNR或自组装的5×2/5×4光栅。显微镜和高分辨率X射线光电子能谱。在室温下，我们进一步将原子氢或分子氢吸附在这些SiNRs上。对于分离的或5×2/5×4有序的SiNR，氢的吸收过程和氢化机理相似，并且不是位点选择性的。主要区别在于隔离的SiNR更容易受到攻击和破坏得更快。实际上，原子氢与任何Si原子都有很强的相互作用，从而改变了它们的结构和电子特性，而氢分子则必须首先解离。氢最终会腐蚀Si纳米带，最终有望将其从Ag（110）表面完全去除。

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