We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, V_(sd), we are able to study the current-voltage relation I-V_(sd) of our device. With increasing V_(sd), a crossover from the linear I-V_(sd) regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small V_(sd) occurs in the presence of high electric field and perpendicular magnetic field.
展开▼
