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首页> 外文期刊>Nanotechnology >Oxidation of nanopores in a silicon membrane: self-limiting formation of sub-10nm circular openings
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Oxidation of nanopores in a silicon membrane: self-limiting formation of sub-10nm circular openings

机译：硅膜中纳米孔的氧化：10nm以下圆形开口的自限形成

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摘要

We describe a simple but reliable approach to shrink silicon nanopores with nanometer precision for potential high throughput biomolecular sensing and parallel DNA sequencing. Here, nanopore arrays on silicon membranes were fabricated by a self-limiting shrinkage of inverted pyramidal pores using dry thermal oxidation at 850 °C. The shrinkage rate of the pores with various initial sizes saturated after 4 h of oxidation. In the saturation regime, the shrinkage rate is within ± 2 nm h~(-1). Oxidized pores with an average diameter of 32 nm were obtained with perfect circular shape. By careful design of the initial pore size, nanopores with diameters as small as 8 nm have been observed. Statistics of the pore width show that the shrinkage process did not broaden the pore size distribution; in most cases the distribution even decreased slightly. The progression of the oxidation and the deformation of the oxide around the pores were characterized by focused ion beam and electron microscopy. Cross-sectional imaging of the pores suggests that the initial inverted pyramidal geometry is most likely the determining factor for the self-limiting shrinkage.
机译：我们描述了一种简单而可靠的方法来缩小具有纳米精度的硅纳米孔，以实现潜在的高通量生物分子传感和并行DNA测序。在这里，硅膜上的纳米孔阵列是通过使用850°C的干式热氧化，通过倒金字塔锥孔的自限收缩来制造的。氧化4小时后，具有各种初始尺寸的孔的收缩率达到饱和。在饱和状态下，收缩率在±2 nm h〜（-1）以内。获得具有平均圆形形状的平均直径为32nm的氧化孔。通过仔细设计初始孔径，已观察到直径小至8 nm的纳米孔。孔径统计表明，收缩过程并未使孔径分布变宽。在大多数情况下，分布甚至略有下降。通过聚焦离子束和电子显微镜表征了孔周围氧化的进展和氧化物的变形。孔的横截面成像表明，最初的倒金字塔形状很可能是自限收缩的决定因素。

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