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Lateral bending of tapered piezo-semiconductive nanostructures for ultra-sensitive mechanical force to voltage conversion

机译：锥形压电半导体纳米结构的横向弯曲，可实现超灵敏的机械力至电压的转换

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摘要

Quasi-1D piezoelectric nanostructures may offer unprecedented sensitivity for transducing minuscule input mechanical forces into high output voltages due to both scaling laws and increased piezoelectric coefficients. However, until now both theoretical and experimental studies have suggested that, for a given mechanical force, lateral bending of piezoelectric nanowires results in lower output electric potentials than vertical compression. Here we demonstrate that this result only applies to nanostructures with a constant cross-section. Moreover, though it is commonly believed that the output electric potential of a strained piezo-semiconductive device can only be reduced by the presence of free charges, we show that the output piezopotential of laterally bent tapered nanostructures, with typical doping levels and very small input forces, can be even increased up to two times by free charges. Our analyses confirm that, though not optimal for piezoelectric energy harvesting, lateral bending of tapered nanostructures with typical doping levels can be ideal for transducing tiny input mechanical forces into high and accessible piezopotentials. Our results provide guidelines for designing high-performance piezo-nano-devices for energy harvesting, mechanical sensing, piezotronics, piezo-phototronics, and piezo-controlled chemical reactions, among others.
机译：准一维压电纳米结构由于比例定律和压电系数的增加，可以将微小的输入机械力转换为高输出电压，从而提供了前所未有的灵敏度。但是，到目前为止，理论和实验研究都表明，对于给定的机械力，压电纳米线的横向弯曲会导致输出电势低于垂直压缩。在这里，我们证明该结果仅适用于具有恒定横截面的纳米结构。此外，尽管通常认为应变的压电半导体器件的输出电势只能通过存在自由电荷来降低，但我们显示出横向弯曲的锥形纳米结构的输出压电势，具有典型的掺杂水平和非常小的输入力量，甚至可以免费增加至两倍。我们的分析证实，尽管不是最佳的压电能量收集方式，但具有典型掺杂水平的锥形纳米结构的横向弯曲对于将微小的输入机械力转换为高且可接近的压电势而言是理想的。我们的结果为设计用于能量收集，机械传感，压电，压电，光电和压电控制化学反应等的高性能压电纳米器件提供了指导。

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