• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Growth of β-Ga_(2O)3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation
【24h】

Growth of β-Ga_(2O)3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

机译：在GaN上生长β-Ga_（2O）3和GaN纳米线以产生光电化学氢

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Enhanced photoelectrochemical (PEC) performances of Ga_(2O)3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga_(2O)3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga_(2O)3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga_(2O)3. These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga_(2O)3 NWs, or by incorporation of indium to form InGaN NWs.
机译：证明了Ga_（2O）3和从GaN原位生长的GaN纳米线（NW）的增强的光电化学（PEC）性能。在相似的实验条件下，Ga_（2O）3和GaN NWs的PEC转换效率分别为0.906％和1.09％，与之相比，它们的GaN薄膜的PEC转换效率为0.581％。发现生长的NW和衬底之间的低结晶度缓冲层不利于PEC性能，但是可以在合适的生长条件下避免该层。 GaN NWs表面的能带弯曲会产生电场，该电场驱使光生电子和空穴相互远离，从而防止复合，并被认为是增强PEC性能的原因。 Ga_（2O）3 NW的增强的PEC效率通过在Ga_（2O）3的价带上方居中3.3 eV的缺陷带的光吸收来辅助。相信这些发现为通过将离子掺杂调整到宽带隙Ga_（2O）3 NW中，或掺入铟形成InGaN NW，为实现可见吸收开辟了可能性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号