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Graphene transparent electrode for enhanced optical power and thermal stability in GaN light-emitting diodes

机译：石墨烯透明电极可增强GaN发光二极管的光功率和热稳定性

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摘要

We report an improvement of the optical power and thermal stability of GaN LEDs using a chemically doped graphene transparent conducting layer (TCL) and a low-resistance contact structure. In order to obtain low contact resistance between the TCL and p-GaN surface, a patterned graphene TCL with Cr/Au electrodes is suggested. A bi-layer patterning method of a graphene TCL was utilized to prevent the graphene from peeling off the p-GaN surface. To improve the work function and the sheet resistance of graphene, CVD (chemical vapor deposition) graphene was doped by a chemical treatment using a HNO_3 solution. The effect of the contact resistance on the power degradation of LEDs at a high injection current level was investigated. In addition, the enhancement of the optical power via an increase in the current spreading and a decrease in the potential barrier of the graphene TCL was investigated.
机译：我们报告了使用化学掺杂的石墨烯透明导电层（TCL）和低电阻接触结构改善了GaN LED的光功率和热稳定性的问题。为了获得TCL和p-GaN表面之间的低接触电阻，建议使用带有Cr / Au电极的图形化石墨烯TCL。利用石墨烯TCL的双层图案化方法来防止石墨烯从p-GaN表面剥离。为了改善石墨烯的功函数和薄层电阻，通过使用HNO_3溶液的化学处理来掺杂CVD（化学气相沉积）石墨烯。在高注入电流水平下，研究了接触电阻对LED功率下降的影响。另外，研究了通过石墨烯TCL的电流扩展的增加和电势垒的减小来提高光功率。

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