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首页> 外文期刊>Nanotechnology >Epitaxial growth of visible to infra-red transparent conducting In _2O_3 nanodot dispersions and reversible charge storage as a Li-ion battery anode
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Epitaxial growth of visible to infra-red transparent conducting In _2O_3 nanodot dispersions and reversible charge storage as a Li-ion battery anode

机译：可见光到红外透明导电In_2O_3纳米点分散体的外延生长和可逆电荷存储，作为锂离子电池阳极

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Unique bimodal distributions of single crystal epitaxially grown In _2O_3 nanodots on silicon are shown to have excellent IR transparency greater than 87% at IR wavelengths up to 4 μm without sacrificing transparency in the visible region. These broadband antireflective nanodot dispersions are grown using a two-step metal deposition and oxidation by molecular beam epitaxy, and backscattered diffraction confirms a dominant (111) surface orientation. We detail the growth of a bimodal size distribution that facilitates good surface coverage (80%) while allowing a significant reduction in In_2O_3 refractive index. This unique dispersion offers excellent surface coverage and three-dimensional volumetric expansion compared to a thin film, and a step reduction in refractive index compared to bulk active materials or randomly porous composites, to more closely match the refractive index of an electrolyte, improving transparency. The (111) surface orientation of the nanodots, when fully ripened, allows minimum lattice mismatch strain between the In_2O_3 and the Si surface. This helps to circumvent potential interfacial weakening caused by volume contraction due to electrochemical reduction to lithium, or expansion during lithiation. Cycling under potentiodynamic conditions shows that the transparent anode of nanodots reversibly alloys lithium with good Coulombic efficiency, buffered by co-insertion into the silicon substrate. These properties could potentially lead to further development of similarly controlled dispersions of a range of other active materials to give transparent battery electrodes or materials capable of non-destructive in situ spectroscopic characterization during charging and discharging.
机译：外延生长在硅上的In _2O_3纳米点上的单晶的独特双峰分布显示出在高达4μm的IR波长下具有超过87％的出色IR透明性，而不会牺牲可见区域的透明性。这些宽带抗反射纳米点分散体是通过两步金属沉积和分子束外延氧化而生长的，反向散射衍射确定了主要的（111）表面取向。我们详述了双峰尺寸分布的增长，该分布有利于良好的表面覆盖率（80％），同时允许In_2O_3折射率的显着降低。与薄膜相比，这种独特的分散体具有出色的表面覆盖率和三维体积膨胀性，与块状活性材料或无规多孔复合材料相比，折射率的阶跃降低，可以更紧密地匹配电解质的折射率，从而提高透明度。纳米点的（111）表面取向完全成熟后，可以使In_2O_3与Si表面之间的晶格失配应变最小。这有助于避免由于电化学还原成锂或锂化过程中的膨胀而引起的体积收缩所引起的潜在界面弱化。在电位动力学条件下循环表明，纳米点的透明阳极可逆地以良好的库仑效率对锂进行合金化，并通过共插入硅衬底而得到缓冲。这些性质可能会导致进一步发展一系列其他活性材料的类似控制分散体，以提供透明的电池电极或在充电和放电期间能够进行非破坏性原位光谱表征的材料。

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