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Controllable lightinduced conic structures in silicon nanowire arrays by metalassisted chemical etching

机译:通过金属辅助化学刻蚀可控制的硅纳米线阵列中的光诱导圆锥结构

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摘要

Silicon nanowires (SiNWs) have long been considered a promising material due to their extraordinary electrical and optical properties. As a simple, highly efficient fabrication method for SiNWs, metal-assisted chemical etching (MACE) has been intensively studied over recent years. However, effective control by modulation of simple parameters is still a challenging topic and some key questions still remain in the mechanistic processes. In this work, a novel method to manipulate SiNWs with a light-modulated MACE process has been systematically investigated. Conic structures consisting of inclined and clustered SiNWs can be generated and effectively modified by the incident light while new patterns such as 'bamboo shoot' arrays can also be formed under certain conditions. More importantly, detailed study has revealed a new top-down 'diverting etching' model of the conic structures in this process, different from the previously proposed 'bending' model. As a consequence of this mechanism, preferential lateral mass transport of silver particles occurs. Evidence suggests a relationship of this phenomenon to the inhomogeneous distribution of the light-induced electron-hole pairs beneath the etching front. Study on the morphological change and related mechanism will hopefully open new routes to understand and modulate the formation of SiNWs and other nanostructures.
机译:硅纳米线(SiNW)由于其非凡的电学和光学特性,长期以来一直被认为是一种有前途的材料。作为用于SiNW的一种简单,高效的制造方法,近年来对金属辅助化学蚀刻(MACE)进行了深入研究。但是,通过简单参数的调制进行有效控制仍然是一个具有挑战性的话题,机械过程中仍然存在一些关键问题。在这项工作中,系统地研究了一种新的用光调制MACE工艺处理SiNW的方法。可以由入射光生成并有效修改由倾斜的和簇状的SiNW构成的圆锥结构,同时在某些条件下还可以形成诸如“竹笋”阵列的新图案。更重要的是,详细的研究揭示了在此过程中圆锥结构的新的自上而下的“转向蚀刻”模型,与之前提出的“弯曲”模型不同。由于该机理,发生了银颗粒的优先横向质量传输。有证据表明,这种现象与蚀刻前沿下方的光感应电子-空穴对的不均匀分布有关。对形态变化及其相关机制的研究有望为理解和调控SiNWs和其他纳米结构的形成开辟新的途径。

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