• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >High performance tunnel field-effect transistor by gate and source engineering
【24h】

High performance tunnel field-effect transistor by gate and source engineering

机译：栅极和源极工程技术的高性能隧道场效应晶体管

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

As one of the most promising candidates for future nanoelectronic devices, tunnel field-effect transistors (TFET) can overcome the subthreshold slope (SS) limitation of MOSFET, whereas high ON-current, low OFF-current and steep switching can hardly be obtained at the same time for experimental TFETs. In this paper, we developed a new nanodevice technology based on TFET concepts. By designing the gate configuration and introducing the optimized Schottky junction, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated. A steeper SS can be achieved in the fabricated mFSB-TFET on the bulk Si substrate benefiting from the coupled quantum band-to-band tunneling (BTBT) mechanism, as well as a high I-ON/I-OFF ratio (similar to 10(7)) at V-DS = 0.2 V without an area penalty. By compatible SOI CMOS technology, the fabricated Si mFSB-TFET device was further optimized with a high I-ON/I-OFF ratio of similar to 10(8) and a steeper SS of over 5.5 decades of current. A minimum SS of below 60 mV dec(-1) was experimentally obtained, indicating its dominant quantum BTBT mechanism for switching.
机译：作为未来纳米电子器件最有希望的候选者之一，隧道场效应晶体管（TFET）可以克服MOSFET的亚阈值斜率（SS）的局限性，而在这种情况下很难获得高导通电流，低截止电流和陡峭的开关同时进行实验性TFET。在本文中，我们基于TFET概念开发了一种新的纳米器件技术。通过设计栅极配置并引入优化的肖特基结，提出并通过实验证明了具有掺杂物隔离肖特基源极（mFSB-TFET）的多指栅TFET。得益于耦合的量子带到带隧穿（BTBT）机制以及高的I-ON / I-OFF比（大约为10），可以在块状Si衬底上的mFSB-TFET中制造出更陡的SS （7））在V-DS = 0.2 V时没有面积损失。通过兼容的SOI CMOS技术，可以进一步优化所制造的Si mFSB-TFET器件，使其具有接近10（8）的高I-ON / I-OFF比和超过5.5倍电流的更陡的SS。实验获得了低于60 mV dec（-1）的最小SS，表明其主要的量子BTBT转换机制。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号