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首页> 外文期刊>Nanotechnology >Enhancement of the Schottky barrier height of Au/ZnO nanocrystal by zinc vacancies using a hydrothermal seed layer
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Enhancement of the Schottky barrier height of Au/ZnO nanocrystal by zinc vacancies using a hydrothermal seed layer

机译：锌空位利用水热晶种层提高Au / ZnO纳米晶体的肖特基势垒高度

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Various seed layers were prepared on a Si substrate using the sol-gel (SG) or hydrothermal (HT) method and then ZnO nanocrystal was grown on the seed layer by an HT process. Au/ZnO nanocrystal Schottky diodes (SDs) were fabricated to study the effects of various seed layers on the electrical properties of Au/ZnO SDs. The observations showed that large numbers of Zn vacancies were present near the interface of Au/ZnO with an HT seed layer. The Zn vacancy plays an acceptor-like role, which raises the barrier height of the Au/ZnO SDs to 0.79 eV with a rectifying ratio of more than 8000. Hence, a non-surface-treated Au/ZnO SD was achieved as compared to those of other reported oxygen-plasma treated surfaces. In contrast, oxygen vacancies appear near the interface of Au/ZnO with an SG seed layer. The O vacancy plays a donor-like role, which reduces the barrier height of Au/ZnO, leading to an Ohmic behavior in the I-V characteristics. Zn out-diffusion is found during Au evaporation by of x-ray photoelectron spectroscopy measurements.
机译：使用溶胶-凝胶（SG）或水热（HT）方法在Si衬底上制备各种种子层，然后通过HT工艺在种子层上生长ZnO纳米晶体。制作了Au / ZnO纳米晶肖特基二极管（SD），以研究各种种子层对Au / ZnO SDs电性能的影响。观察结果表明，在Au / ZnO与HT种子层的界面附近存在大量的Zn空位。 Zn的空位起着受体的作用，将Au / ZnO SD的势垒高度提高到0.79 eV，且整流比大于8000。因此，与之相比，获得了未经表面处理的Au / ZnO SD其他报道的氧等离子体处理过的表面。相反，氧空位出现在Au / ZnO与SG种子层的界面附近。 O空位起着类似供体的作用，降低了Au / ZnO的势垒高度，导致了I-V特性的欧姆行为。通过X射线光电子能谱测量，发现在Au蒸发过程中Zn向外扩散。

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