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Chemical vapor deposition of twisted bilayer and few-layer MoSe_2 over SiO_x substrates

机译：在SiO_x衬底上化学气相沉积扭曲的双层和几层MoSe_2

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The chemical vapor deposition of monolayer and few-layer transition metal dichalcogenides is a rapidly developing area of materials science due to the exciting electrical, optical, thermal and mechanical properties of transition metal dichalcogenides in their layered form. These properties make these innovative materials potentially relevant to wide-ranging commercial applications. One of these promising materials is MoSe_2; however, just recently, a few research groups have been able to demonstrate its synthesis via chemical vapor deposition. Moreover, only oriented few-layer MoSe_2 has been exhibited by synthetically formed material using chemical vapor deposition thus far. Here, we confirm twisted-layer MoSe_2 can also form during chemical vapor deposition. Twisted-layer transition metal dichalcogenides alter their properties as compared to their oriented counterparts. Therefore, twisted-layer structures are of interest because they can tune their properties.
机译：由于层状过渡金属二卤化物具有令人兴奋的电，光，热和机械性能，单层和几层过渡金属二卤化物的化学气相沉积是材料科学的快速发展领域。这些特性使这些创新材料潜在地与广泛的商业应用相关。这些有前途的材料之一是MoSe_2。然而，最近，一些研究小组已经能够通过化学气相沉积证明其合成。而且，到目前为止，通过使用化学气相沉积的合成形成的材料仅表现出取向的几层MoSe_2。在这里，我们确认在化学气相沉积过程中也会形成扭曲层MoSe_2。扭曲层过渡金属二卤化物与其定向对应物相比，会改变其性能。因此，扭曲层结构是令人关注的，因为它们可以调整其性能。

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