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All-solution-processed nonvolatile flexible nano-floating gate memory devices

机译：全溶液处理的非易失性柔性纳米浮栅存储器件

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摘要

Organic semiconductors have great potential for future electronic applications owing to their inherent flexibility, low cost, light weight and ability to easily cover large areas. However, all of these advantageous material properties can only be harnessed if simple, cheap and low-temperature fabrication processes, which exclude the need for vacuum deposition and are compatible with flexible plastic substrates, are employed. There are a few solution-based techniques such as spin-coating and inkjet printing that meet the above criteria. In this paper, we describe a novel all-solution-processed nonvolatile memory device fabricated on a flexible plastic substrate. The source, drain and gate electrodes were printed using an inkjet printer with a conducting organic solution, while the semiconducting layer was spin-coated with an n-type polymer. The charge-trapping layer was composed of spin-coated reduced graphene oxide (rGO), which was prepared in the form of a solution using Hummer's method. The fabricated device was characterized in order to confirm the memory characteristics. Device parameters such as threshold voltage shift, retention/endurance characteristics, mechanical robustness and reliability upon bending were also analyzed.
机译：有机半导体由于其固有的柔韧性，低成本，轻量和易于覆盖大面积的能力，在未来的电子应用中具有巨大的潜力。但是，只有采用简单，便宜和低温的制造工艺（不需真空沉积且与柔性塑料基板兼容），才能利用所有这些有利的材料性能。有几种基于解决方案的技术可以满足上述标准，例如旋涂和喷墨打印。在本文中，我们描述了一种在柔性塑料基板上制造的新型全溶液处理非易失性存储器件。使用喷墨打印机用导电有机溶液印刷源电极，漏电极和栅电极，同时用n型聚合物旋涂半导体层。电荷俘获层由旋涂的还原氧化石墨烯（rGO）组成，该溶液使用Hummer方法制备成溶液形式。表征所制造的器件以确认存储特性。还分析了设备参数，例如阈值电压偏移，保持/耐久特性，机械强度和弯曲时的可靠性。

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