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Surface potential imaging with atomic resolution by frequency-modulation Kelvin probe force microscopy without bias voltage feedback

机译:通过频率开尔文探针力显微镜以原子分辨率进行表面电位成像,无偏置电压反馈

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We investigated the capability of obtaining atomic resolution surface potential images by frequency-modulation Kelvin probe force microscopy (FM-KPFM) without bias voltage feedback. We theoretically derived equations representing the relationship between the contact potential difference and the frequency shift (Delta f) of an oscillating cantilever. For the first time, we obtained atomic resolution images and site-dependent spectroscopic curves for Delta f and V-LCPD on a Si (111)-7 x 7 surface. FM-KPFM without bias voltage feedback does not involve the influence of the FM-KPFM controller because it has no deviation from a parabolic dependence of Delta f on the dc-bias voltage. It is particularly suitable for investigation on molecular electronics and organic photovoltaics, because electron or ion movement induced by dc bias is avoided and the electrochemical reactions are inhibited.
机译:我们研究了通过不带偏置电压反馈的调频开尔文探针力显微镜(FM-KPFM)获得原子分辨率表面势能图像的能力。我们从理论上推导了表示接触电位差和振荡悬臂的频率偏移(Δf)之间关系的方程。第一次,我们获得了Si(111)-7 x 7表面上Delta f和V-LCPD的原子分辨率图像和依赖于站点的光谱曲线。没有偏置电压反馈的FM-KPFM不涉及FM-KPFM控制器的影响,因为它与Delta f对直流偏置电压的抛物线相关性没有偏差。由于避免了由直流偏压引起的电子或离子运动并且抑制了电化学反应,因此它特别适合于分子电子学和有机光伏研究。

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