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Controlled growth of inorganic nanorod arrays using graphene nanodot seed layers

机译：使用石墨烯纳米点种子层控制无机纳米棒阵列的生长

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摘要

We report the density- and size-controlled growth of zinc oxide (ZnO) nanorod arrays on arbitrary substrates using reduced graphene oxide (rGO) nanodot arrays. For the controlled growth of the ZnO nanorod arrays, rGO nanodot arrays with tunable density and size were designed using a monolayer of diblock copolymer micelles and oxygen plasma etching. While the diameter and number density of the ZnO nanorods were readily determined by those of the rGO nanodots, the length of the ZnO nanorods was easily controlled by changing the growth time. x-ray diffraction and electron microscopy confirmed that the vertically well-aligned ZnO nanorod arrays were heteroepitaxially grown on the rGO nanodots. Strong, sharp near-band-edge emission peaks with no carbon-related peak were observed in the photoluminescence spectra, implying that the ZnO nanostructures grown on the rGO nanodots were of high optical quality and without carbon contamination. Our approach provides a general and rational route for heteroepitaxial growth of high-quality inorganic materials with tunable number density, size, and spatial arrangement on arbitrary substrates using rGO nanodot arrays.
机译：我们报告使用减少的氧化石墨烯（rGO）纳米点阵列在任意基板上的氧化锌（ZnO）纳米棒阵列的密度和尺寸控制的增长。为了控制ZnO纳米棒阵列的生长，使用单嵌段的二嵌段共聚物胶束和氧等离子体蚀刻设计了具有可调密度和尺寸的rGO纳米点阵列。虽然可以通过rGO纳米点轻松确定ZnO纳米棒的直径和数量密度，但可以通过改变生长时间轻松控制ZnO纳米棒的长度。 X射线衍射和电子显微镜证实，垂直良好排列的ZnO纳米棒阵列在rGO纳米点上异质外延生长。在光致发光光谱中观察到强的，尖锐的近带边缘发射峰，没有碳相关峰，这表明在rGO纳米点上生长的ZnO纳米结构具有很高的光学质量，并且没有碳污染。我们的方法为使用rGO纳米点阵列在任意衬底上具有可调数量密度，尺寸和空间排列的高质量无机材料的异质外延生长提供了一条通用而合理的途径。

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