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首页> 外文期刊>Nanotechnology >Floating gate memory with charge storage dots array formed by Dps protein modified with site-specific binding peptides
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Floating gate memory with charge storage dots array formed by Dps protein modified with site-specific binding peptides

机译：具有由位点特异性结合肽修饰的Dps蛋白形成的电荷存储点阵列的浮栅存储器

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摘要

We report a nanodot (ND) floating gate memory (NFGM) with a high-density ND array formed by a biological nano process. We utilized two kinds of cage-shaped proteins displaying SiO2 binding peptide (minTBP-1) on their outer surfaces: ferritin and Dps, which accommodate cobalt oxide NDs in their cavities. The diameters of the cobalt NDs were regulated by the cavity sizes of the proteins. Because minTBP-1 is strongly adsorbed on the SiO2 surface, high-density cobalt oxide ND arrays were obtained by a simple spin coating process. The densities of cobalt oxide ND arrays based on ferritin and Dps were 6.8 x 10(11) dots cm(-2) and 1.2 x 10(12) dots cm(-2), respectively. After selective protein elimination and embedding in a metal-oxide-semiconductor (MOS) capacitor, the charge capacities of both ND arrays were evaluated by measuring their C-V characteristics. The MOS capacitor embedded with the Dps ND array showed a wider memory window than the device embedded with the ferritin ND array. Finally, we fabricated an NFGM with a high-density ND array based on Dps, and confirmed its competent writing/erasing characteristics and long retention time.
机译：我们报告了通过生物纳米工艺形成的具有高密度ND阵列的纳米点（ND）浮栅存储器（NFGM）。我们利用了两种在其外表面显示SiO2结合肽（minTBP-1）的笼状蛋白：铁蛋白和Dps，它们在其腔体内容纳了氧化钴ND。钴ND的直径由蛋白质的空腔尺寸调节。由于minTBP-1强烈吸附在SiO2表面上，因此可通过简单的旋涂工艺获得高密度氧化钴ND阵列。基于铁蛋白和Dps的氧化钴ND阵列的密度分别为6.8 x 10（11）点cm（-2）和1.2 x 10（12）点cm（-2）。在选择性去除蛋白质并将其嵌入金属氧化物半导体（MOS）电容器后，通过测量它们的C-V特性来评估两个ND阵列的电荷容量。嵌入Dps ND阵列的MOS电容器比嵌入铁蛋白ND阵列的器件具有更大的存储窗口。最后，我们基于Dps制作了具有高密度ND阵列的NFGM，并确认了其出色的写入/擦除特性和较长的保留时间。

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