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首页> 外文期刊>Nanotechnology >Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors
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Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors

机译：使用MEMS加热器/传感器对InAs纳米线进行完全热电表征

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摘要

Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting of silicon nitride membranes structured with resistive gold heaters/sensors. Preparation, operation and characterization of the devices are described in detail. Thermal decoupling of the heater/sensor platforms has been optimized reaching thermal conductances as low as 20 nW K~(-1) with a measurements sensitivity below 0.2 nW K~(-1). The InAs NWs were characterized in terms of thermal conductance, four-probe electrical conductance and thermopower (Seebeck coefficient), all measured on a single NW. The temperature dependence of the parameters determining the thermoelectric figure-of-merit of an InAs NW was acquired in the range 200-350 K featuring a minor decrease of the thermal conductivity from 2.7 W(m K)~(-1) to 2.3W(m K)~(-1).
机译：使用基于加热器/传感器原理的高灵敏度，微细加工的传感设备，已在单个砷化铟纳米线上（NW）上对一组完整的热电参数进行了精确测量。这些设备被制造为微机电系统，该系统由具有电阻式金加热器/传感器的氮化硅膜组成。详细描述了设备的制备，操作和特性。加热器/传感器平台的热解耦已优化，热导率低至20 nW K〜（-1），测量灵敏度低于0.2 nW K〜（-1）。 InAs NW的热导率，四探针电导率和热功率（塞贝克系数）均通过单个NW进行测量。在200-350 K范围内获得了确定InAs NW热电品质因数的参数的温度依赖性，其特征是热导率从2.7 W（m K）〜（-1）轻微降低到2.3W （m K）〜（-1）。

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