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Ni_3C-assisted growth of carbon nanofibres 300°C by thermal CVD

机译：通过热CVD Ni_3C辅助生长300°C的碳纳米纤维

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摘要

Ni-assisted thermal chemical vapor deposition (TCVD) is one of the most common techniques for the growth of carbon nanofibresanotubes (CNFs/CNTs). However, some fundamental issues related to the catalytic growth of CNFs/CNTs, such as the low-limit growth temperature, the limiting steps and the state of Ni, are still controversial. Here, we report the growth of CNFs at 300 °C; that is the lowest temperature for the growth of CNFs by TCVD using Ni as the catalyst so far. The results showed that the Ni existed in rhombohedral Ni_3C, not in the normal form of face-centered cubic Ni, and the C atoms for building the CNFs were precipitated from the (001) planes of the faceted Ni_3C nanoparticles. The CNFs are believed to be formed by the decomposition-formation cycle of metastable Ni_3C that has a low-limit decomposition temperature of about 300 °C. Our results strongly suggest that TCVD is a valuable tool for the synthesis of CNFs/CNTs at temperatures below 400 °C, which is generally considered as the upper-limit temperature for fabricating complementary metal oxide semiconductor devices but is the low-limit temperature for growing CNFs/CNTs by TCVD at present.
机译：镍辅助热化学气相沉积（TCVD）是碳纳米纤维/纳米管（CNFs / CNT）生长的最常用技术之一。但是，与CNF / CNTs催化生长有关的一些基本问题，如低极限生长温度，极限步骤和Ni的状态，仍是有争议的。在这里，我们报告了300°C下CNF的增长;这是迄今为止使用Ni作为催化剂的TCVD生长CNFs的最低温度。结果表明，Ni以菱面体Ni_3C的形式存在，而不是以面心立方Ni的正常形式存在，而用于构建CNF的C原子从多面Ni_3C纳米颗粒的（001）平面中析出。认为CNF是由亚稳态Ni_3C的分解形成循环形成的，该亚稳Ni_3C的下限分解温度为约300℃。我们的结果有力地表明，TCVD是在低于400°C的温度下合成CNF / CNT的有价值的工具，该温度通常被认为是制造互补金属氧化物半导体器件的上限温度，但是用于生长的下限温度目前，通过TCVD的CNF / CNT。

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