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Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm

机译：基于小于16 nm的砷化铟纳米线的场效应晶体管的接触特性

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With the scaling down of field effect transistors (FETs) to improve performance, the contact between the electrodes and the channel becomes more and more important. Contact properties of FETs based on ultrathin InAs NWs (with the diameter ranging from sub-7 nm to 16 nm) are investigated here. Chromium (Cr) and nickel (Ni) are proven to form ohmic contact with the ultrathin InAs NWs, in contrast to a recent report (Razavieh A et al ACS Nano 8 6281). Furthermore, the contact resistance is found to depend on the NW diameter and the contact metals, which between Cr and InAs NWs increases more rapidly than that between Ni and InAs NWs when the NW diameter decreases. The origins of the contact resistance difference for the two kinds of metals are studied and NixInAs is believed to play an important role. Based on our results, it is advantageous to use Ni as contact metal for ultrathin NWs. We also observe that the FETs are still working in the diffusive regime even when the channel length is scaled down to 50 nm.
机译：随着场效应晶体管（FET）的按比例缩小以提高性能，电极与沟道之间的接触变得越来越重要。本文研究了基于超薄InAs NW（直径范围从7纳米到16纳米）的FET的接触特性。与最近的报道（Razavieh A等ACS Nano 8 6281）相反，铬（Cr）和镍（Ni）被证明与超薄InAs NW形成欧姆接触。此外，发现接触电阻取决于NW直径和接触金属，当NW直径减小时，Cr和InAs NW之间的接触电阻比Ni和InAs NW之间的接触电阻增长更快。研究了两种金属的接触电阻差异的起因，并认为NixInAs起着重要的作用。根据我们的结果，使用Ni作为超薄NW的接触金属是有利的。我们还观察到，即使沟道长度缩小到50 nm，FET仍在扩散状态下工作。

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