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首页> 外文期刊>Nanotechnology >Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures
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Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures

机译：氟化石墨烯和六方氮化硼作为基于石墨烯的范德华异质结构的ALD种子层

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摘要

Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H_2O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to inplane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in lowdimensional electronics.
机译：通过原子层沉积（ALD）技术制备的超薄介电材料通常用于石墨烯电子产品中。使用包括范德华（vdW）相互作用的第一原理密度泛函理论计算，我们证明了单面氟化石墨烯（SFG）和六方氮化硼（h-BN）表现出大的物理吸附能以及与H_2O的强静电相互作用的ALD前驱体，表明它们作为ALD种子层在石墨烯上进行电介质生长的潜力。在石墨烯-SFG vdW异质结构中，石墨烯是由SFG的垂直本征极化引起的ALD前驱物吸附在SFG表面后被n掺杂的。但是，由于h-BN的面内本征极化，石墨烯-h-BN vdW异质结构有助于保留下面的石墨烯的本征特性。通过基于实际器件设计需求选择SFG或BN作为ALD种子层，石墨烯vdW异质结构可在低维电子学中找到应用。

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