Focused electron beam induced etching of copper in sulfuric acid solutions

Boehme Lindsay; Bresin Matthew; Botman Aureiien; Ranney James; Hastings J. Todd

首页> 外文期刊>Nanotechnology >Focused electron beam induced etching of copper in sulfuric acid solutions

【24h】

Focused electron beam induced etching of copper in sulfuric acid solutions

机译：聚焦电子束诱导的硫酸溶液中铜的蚀刻

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We show here that copper can be locally etched by an electron-beam induced reaction in a liquid. Aqueous sulfuric acid (H2SO4) is utilized as the etchant and all experiments are conducted in an environmental scanning electron microscope. The extent of etch increases with liquid thickness and dose, and etch resolution improves with H2SO4 concentration. This approach shows the feasibility of liquid phase etching for material selectivity and has the potential for circuit editing.

机译：我们在这里表明，铜可以通过电子束在液体中引起的反应而被局部蚀刻。硫酸（H2SO4）用作蚀刻剂，所有实验均在环境扫描电子显微镜中进行。蚀刻的程度随液体厚度和剂量的增加而增加，蚀刻分辨率随H2SO4浓度的提高而提高。这种方法显示了液相蚀刻对材料选择性的可行性，并具有进行电路编辑的潜力。

著录项

来源
《Nanotechnology》 |2015年第49期|共10页
作者
Boehme Lindsay; Bresin Matthew; Botman Aureiien; Ranney James; Hastings J. Todd;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
liquid phase electron-beam induced processing; e-beam induced etching; copper; sulfuric acid; etch selectivity; circuit edit;

机译：液相电子束诱导加工;电子束诱导蚀刻;铜;硫酸;蚀刻选择性;电路编辑;

相似文献

外文文献
中文文献
专利

1. Focused electron beam induced etching of copper in sulfuric acid solutions [J] . Boehme Lindsay, Bresin Matthew, Botman Aureiien, Nanotechnology . 2015,第49期

机译：聚焦电子束诱导的硫酸溶液中铜的蚀刻
2. Focused electron beam induced etching of silicon by chlorine gas: Negative effects of residual gas contamination on the etching process [J] . P. Roediger, H. D. Wanzenboeck, G. Hochleitner, Journal of Applied Physics . 2010,第12期

机译：聚焦电子束诱导的氯气对硅的蚀刻：残留气体污染对蚀刻工艺的负面影响
3. Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching [J] . Liebes Y., Hadad B., Ashkenasy N. Nanotechnology . 2011,第28期

机译：电子对聚焦电子束诱导刻蚀制备的纳米孔形状的影响
4. Chip Scale Focussed Electron Beam Induced Etching of a Silicon Nitride Membrane with Unique Beam Writing Strategies [C] . K. E. Burcham, J. Fridmann, J. Klingfus, NSTI nanotechnology conference and expo;Nanotech conference expo;NSTI-Nanotech 2011;TechConnect world annual conference expo . 2011

机译：芯片级聚焦电子束诱导刻蚀氮化硅膜的独特束流写入策略
5. Optical channel waveguide formation by focused ion beam induced selective mixing and wet chemical etching: Design, fabrication and characterization. [D] . Kumar, Mukesh. 1997

机译：通过聚焦离子束诱导的选择性混合和湿法化学蚀刻形成光通道波导：设计，制造和表征。
6. Combined Focused Electron Beam-Induced Deposition and Etching for the Patterning of Dense Lines without Interconnecting Material [O] . Sangeetha Hari, P. H. F. Trompenaars, J. J. L. Mulders, 2021

机译：结合聚焦的电子束诱导的沉积和蚀刻用于致密线的图案化而不互连材料
7. Controlled focused electron beam-induced etching for the fabrication of sub-beam-size nanoholes [O] . Hiroyuki Miyazoe, Ivo Utke, Johann Michler, 2008

机译：控制聚焦电子束诱导的蚀刻用于制造子梁尺寸纳米孔
8. Effect of Tunnel Resistance in the Strong Tunneling Regime on the Conductance of the Single Electron Transistors Fabricated Using Focused Ion Beam Etching; Conference paper [R] . Karre, P. S., Bergstrom, P. L., Mallick, G., 2006

机译：强隧道内隧道阻力对聚焦离子束刻蚀制备单电子晶体管电导的影响2。会议文件

Focused electron beam induced etching of copper in sulfuric acid solutions

摘要

著录项

相似文献

相关主题

期刊订阅