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Uniformity of large-area bilayer graphene grown by chemical vapor deposition

机译：化学气相沉积法生长大面积双层石墨烯的均匀性

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摘要

Graphene grown by chemical vapor deposition (CVD) on copper foils is a viable method for large area films for transparent conducting electrode (TCE) applications. We examine the spatial uniformity of large area films on the centimeter scale when transferred onto both Si substrates with 300 nm oxide and flexible transparent polyethylene terephthalate substrates. A difference in the quality of graphene, as measured by the sheet resistance and transparency, is found for the areas at the edges of large sheets that depends on the supporting boat used for the CVD growth. Bilayer graphene is grown with uniform properties on the centimeter scale when a flat support is used for CVD growth. The flat support provides consistent delivery of precursor to the copper catalyst for graphene growth. These results provide important insights into the upscaling of CVD methods for growing high quality graphene and its transfer onto flexible substrates for potential applications as a TCE.
机译：通过化学气相沉积（CVD）在铜箔上生长的石墨烯是用于透明导电电极（TCE）应用的大面积薄膜的可行方法。当转移到具有300 nm氧化物的Si基板和柔性透明聚对苯二甲酸乙二醇酯基板上时，我们将以厘米为单位检查大面积薄膜的空间均匀性。对于大片材的边缘区域，发现了石墨烯质量的差异（通过薄层电阻和透明度来衡量），该面积取决于用于CVD生长的支撑舟皿。当将平坦的支撑物用于CVD生长时，双层石墨烯的生长具有厘米级的均匀特性。平坦载体为石墨烯生长提供了前驱体向铜催化剂的稳定输送。这些结果为提高高质量石墨烯的CVD方法的升级以及将其转移到柔性基板上作为TCE的潜在应用提供了重要的见识。

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