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Synthesis and mechanistic study of in situ halogenitrogen dual-doping in graphene tailored by stepwise pyrolysis of ionic liquids

机译：离子液体逐步热解制备的石墨烯中原位卤素/氮双掺杂的合成及机理研究

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摘要

New halogenitrogen dual-doped graphenes (X/N-G) with thermally tunable doping levels are synthesized via the thermal reduction of graphite oxide (GO) with stepwise-pyrolyzed ionic liquids. The doping process of halogen and nitrogen into the graphene lattice proceeds via substitutional or covalent bonding through the physisorption or chemisorption of in situ pyrolyzed dopant precursors. The doping process is performed by heating to 300-400 degrees C of ionic liquid, and the chemically assisted reduction of GO is facilitated by ionic iodine, resulting in I/ N-G materials possessing about three and two orders of magnitude higher conductivity (similar to 22 200 S m(-1)) and charge carrier density (similar to 1021 cm(-3)), compared to those of thermally reduced GO. The thermally tunable doping levels of halogen in X/N-G significantly increase the conductivity of doped graphene to similar to 27 800 S m(-1).
机译：通过逐步分解的离子液体对氧化石墨（GO）进行热还原，可以合成具有可热调整掺杂水平的新型卤素/氮双掺杂石墨烯（X / N-G）。卤素和氮向石墨烯晶格的掺杂过程是通过原位热解掺杂剂前体的物理吸附或化学吸附，通过取代键或共价键进行的。掺杂过程是通过将离子液体加热到300-400摄氏度进行的，离子碘促进了化学辅助还原GO的过程，导致I / NG材料的电导率提高了大约三个和两个数量级（类似于22 200 S m（-1））和载流子密度（类似于1021 cm（-3）），与热还原GO相比。 X / N-G中卤素的热可调掺杂水平显着提高了掺杂石墨烯的电导率，使其接近27 800 S m（-1）。

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