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Nanoscale multilevel switching in Ge2Sb2Te5 thin film with conductive atomic force microscopy

机译：Ge2Sb2Te5薄膜中的纳米级多级开关的导电原子力显微镜

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We demonstrate three-level data storage in amorphous Ge2Sb2Te5 (GST) thin film by conductive atomic force microscopy (C-AFM). Due to the high resolution and current sensitivity of AFM, the electrical properties of GST are investigated in the nanoscale. By applying an electric field between an AFM probe tip and the GST surface, well-resolved threshold switching and memory switching are obtained successively in a current-voltage sweeping. Correspondingly, three states with high, intermediate and low resistances, which are assigned data values '0', '1' and '2' respectively, are observed in an IV-spectrum. The electrical resistance of GST thin film decreases by over two orders of magnitude in both switching processes, which provides a clear contrast to distinguish the three logical states. We also discuss the threshold electrical field of threshold switching in the amorphous GST thin film. Nanoscale conductive marks in the amorphous ON state and crystalline state are successfully fabricated by applying IV-spectra with different voltage ranges on the GST thin films.
机译：我们通过导电原子力显微镜（C-AFM）演示了非晶Ge2Sb2Te5（GST）薄膜中的三级数据存储。由于AFM的高分辨率和电流敏感性，因此在纳米级研究了GST的电性能。通过在AFM探针尖端和GST表面之间施加电场，可以在电流-电压扫描中相继获得分辨率良好的阈值切换和存储器切换。相应地，在IV光谱中观察到三个具有高，中和低电阻的状态，分别被分配了数据值“ 0”，“ 1”和“ 2”。在两个开关过程中，GST薄膜的电阻均降低了两个数量级以上，这为区分三种逻辑状态提供了明显的对比。我们还讨论了非晶GST薄膜中阈值切换的阈值电场。通过在GST薄膜上施加具有不同电压范围的IV光谱，成功地制造了处于非晶态和结晶态的纳米级导电标记。

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