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Hydrogen plasma-mediated modification of the electrical transport properties of ZnO nanowire field effect transistors

机译:氢等离子体介导的ZnO纳米线场效应晶体管电输运性质的修饰

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摘要

We investigated the effects of hydrogen plasma treatment on the electrical transport properties of ZnO nanowire field effect transistors (FETs) with a back gate configuration. After hydrogen plasma treatment of the FET devices, the effective carrier density and mobility of the nanowire FETs increased with a threshold voltage shift toward a negative gate bias direction. This can be attributed to the desorption of oxygen molecules adsorbed on the surface of the nanowire channel, to passivation and to doping effects due to the incorporation of energetic hydrogen ions generated in plasma.
机译:我们研究了氢等离子体处理对具有背栅配置的ZnO纳米线场效应晶体管(FET)的电传输特性的影响。在对FET器件进行氢等离子体处理后,纳米线FET的有效载流子密度和迁移率随着阈值电压向负栅极偏置方向的移动而增加。这可以归因于吸附在纳米线通道表面上的氧分子的解吸,钝化和归因于等离子体中产生的高能氢离子的掺入的掺杂作用。

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