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Irradiation-induced degradation of PTB7 investigated by valence band and S 2p photoelectron spectroscopy

机译：价带和S 2p光电子能谱研究辐照诱导的PTB7降解

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摘要

Monochromatic radiation with known absolute radiant power from an undulator at the electron storage ring Metrology Light Source (MLS) was used to irradiate PTB7 (a thieno[3, 4-b] thiophene-alt-benzodithiophene polymer) thin films at wavelengths (photon energies) of 185 nm (6.70 eV), 220 nm (5.64 eV), 300 nm (4.13 eV), 320 nm (3.88 eV), 356 nm (3.48 eV) and 675 nm (1.84 eV) under ultra-high vacuum conditions for the investigation of radiation-induced degradation effects. The characterization of the thin films is focused at ultraviolet photoelectron spectroscopy (UPS) of valence bands and is complemented by S 2p x-ray photoelectron spectroscopy (S 2p XPS) before and after the irradiation procedure. The radiant exposure was determined for each irradiation by means of photodiodes traceably calibrated to the international system of units SI. The valence band spectra show the strongest changes for the shortest wavelengths and no degradation effect at 356 nm and 675 nm even with the highest radiant exposure applied. In the spectral range where the Sun appears bright on the Earth's surface, no degradation effects are observed.
机译：来自电子存储环计量光源（MLS）上起伏器的具有绝对绝对辐射功率的单色辐射用于以波长（光子能量）照射PTB7（噻吩并[3,4-b]噻吩-alt-苯并二噻吩聚合物）薄膜。 ）在超高真空条件下的185 nm（6.70 eV），220 nm（5.64 eV），300 nm（4.13 eV），320 nm（3.88 eV），356 nm（3.48 eV）和675 nm（1.84 eV）辐射引起的降解效应的研究。薄膜的表征集中于价带的紫外光电子能谱（UPS），并在辐照过程之前和之后通过S 2p x射线光电子能谱（S 2p XPS）进行补充。借助于可溯源至国际单位SI的光电二极管确定每次辐照的辐射暴露。价带光谱显示最短波长的变化最大，即使施加了最高的辐射暴露，在356 nm和675 nm处也没有降解作用。在太阳在地球表面显得明亮的光谱范围内，未观察到降解效应。

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