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Multilevel programming in Cu/NiOy/NiOx/Pt unipolar resistive switching devices

机译：Cu / NiOy / NiOx / Pt单极电阻开关器件中的多级编程

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摘要

The application of a NiOy/NiOx bilayer in resistive switching (RS) devices with x > y was studied for its ability to achieve reliable multilevel cell (MLC) characteristics. A sharp change in resistance brought about by sweeping the voltage, along with an improved on/off ratio (> 103) and endurance (104) were achieved in the bilayer structure as compared to the single NiOx layer devices. Moreover, it was found that nonvolatile and stable resistance levels, especially the multiple low-resistance states of Cu/NiOy/NiOx/Pt memory devices, could be controlled by varying the compliance current. All the multilevel resistance states of the Cu/NiOy/NiOx/Pt bilayer devices were stable for up to 500 consecutive dc switching cycles, as compared to the Cu/NiOx/Pt single layer devices. The temperature-dependent variation of the high and low resistance states of both the bilayer and single layer devices was further investigated to elucidate the charge conduction mechanism. Finally, based on a detailed analysis of the experimental results, comparisons of the possible models for RS in bilayer and single layer memory devices have also been discussed.
机译：研究了NiOy / NiOx双层在x> y的电阻开关（RS）器件中的应用，因为它具有实现可靠的多级电池（MLC）特性的能力。与单层NiOx层器件相比，双层结构在扫掠电压时产生了急剧的电阻变化，并且开/关比（> 103）和耐久性（104）得到了改善。而且，发现可以通过改变顺从电流来控制非易失性和稳定的电阻水平，特别是Cu / NiOy / NiOx / Pt存储器件的多个低电阻状态。与Cu / NiOx / Pt单层器件相比，Cu / NiOy / NiOx / Pt双层器件的所有多级电阻状态在多达500个连续的dc开关周期内均保持稳定。进一步研究了双层和单层器件的高阻态和低阻态的温度相关变化，以阐明电荷传导机理。最后，基于对实验结果的详细分析，还讨论了双层和单层存储设备中RS的可能模型的比较。

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